林殷茵
发表时间:2014-10-20 阅读次数:1149次

简介
    林殷茵,女,博士,复旦大学专用集成电路与系统国家重点实验室教授、博士生导师,复旦大学“半导体存储及应用研究中心”主任。上海市优秀学科带头人,上海市第七界十大IT科技新锐,上海市青年科技启明星,复旦大学第六界校长奖获得者,复旦大学2008年优秀研究生导师。主要学术任职有IET上海分会执行委员会委员、2010IWM国际会议共主席、2010年国际固态电路和工艺技术会议程序委员会(ICSICT)委员、2009年ASICON国际会议程序委员会委员、2008年ISOS/IWIDS国际会议程序委员会委员。
    近年来在国际著名杂志和存储器会议上,如JSSC2013, VLSI Circuit Symposium 2012, VLSI Technology Symposium(3篇), EDL(9篇)、IMW(6篇)和 APL(3篇)等,共发表相关文章125篇,被SCI/SCIE收录的97篇。授权或申请相关发明专利105项。


研究方向
    半导体存储器及其应用,包括阻变存储器RRAM、静态随机存储器SRAM、嵌入式动态随机存储器eDRAM、先进逻辑工艺PVTA的电路表征和监测、相变存储器PRAM、新型存储器在系统中的应用等。具体包括

  • 半导体存储器电路设计与测试研究
  • 半导体存储器在系统中的应用研究
  • 半导体存储器工艺与器件研究

 

近五年承担的主要项目

  • 国家863重点项目,基于标准逻辑的阻变存储关键技术研究,企业合作;
  • 国家863重点项目,电阻随机存储器的嵌入式应用,企业合作;
  • 国家863重点项目,电阻随机存储器关键技术,企业合作;
  • 十二五重大专项,PVTA波动电路表征和监测技术研究,企业合作;
  • 十二五重大专项,efuse关键技术研究,企业合作;
  • 企业合作项目,嵌入式动态随机存储器关键技术研究,;
  • 企业合作项目,高速低功耗混合存储架构设计;
  • 三星全球基金,TByte高密度阻变存储器关键技术研究;
  • 国际合作项目,先进逻辑的PVTA波动表征;
  • 国际合作项目,STT-MRAM可靠性研究;
  • 企业合作项目,面向无线通讯应用的低功耗SRAM电路设计和测试技术研究;
  • 国家973重大基础研究计划,相变存储器电路模拟和优化设计;
  • 其它国家自然科学基金存储器项目4项、上海市项目2项。

 

讲授课程

  • 研究生课程:先进的半导体存储器----设计、制造、测试及应用
  • 本科生课程:微电子重要进展及基本研究方法


代表性论文
1.Y. L. Song, Y. Meng, X. Y. Xue, F. J. Xiao, Y. Liu, B. A. Chen, Y. Y. Linetal., Reliability Significant Improvement of Resistive Switching Memory by Dynamic Self-adaptive Write Method, VLSI Technology Symposium, pp.102-103, 2013.
2. Xue, X.Y., Jian, W.X., Yang, J.G., Xiao, F.J., Chen, G., Xu, X.L., Xie, Y.F., Lin Y.Y. etal., A 0.13 μm 8 Mb Logic-Based CuxSiyO ReRAM with Self-Adaptive Operation for Yield Enhancement and Power Reduction, IEEE Journal of Solid-State Circuits, vol.48, no.5, 2013.
3.  Xue, X.Y., Meng, C., Dong, C.L., Chen, B., Lin Y.Y. etal., A logic-based embedded DRAM with novel cell structure and dynamically adaptive refresh for long data retention, zero data availability penalty and high yield, International Memory Workshop, pp. 132-134, 2013.
4. Xue, X.Y., Jian, W.X., Yang, J.G., Xiao, F.J., Chen, G., Xu, X.L., Xie, Y.F., Lin Y.Y. etal., A 0.13μm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction,VLSI Circuit Symposium, pp.42-43, 2012.
5.     Wang, Y.-L., Song, Y.-L., Yang, L.-M., Lin Y.Y. etal., Algorithm-Enhanced Retention Based on Megabit CuxSiyO Array of RRAM, IEEE Electronic Device Letters, vol.33 , Issue.10 ,pp.1408-1410, 2012.
6. Yang L.M. ,Song, Y.L., Liu Y., Wang Y.L., Tian X.P. , Wang M., Lin Y.Y. etal., Linear Scaling of Reset Current Down to 22-nm Node for a Novel CuxSiyO RRAM, IEEE Electronic Device Letters, vol.33, no.1, pp.89-91, 2012.
7. Song Y. L., Liu Y., Wang Y. L., Wang M., Tian X. P., Yang L. M., Lin Y.Y. etal., Low Reset Current in Stacked AlOx/WOy Resistive Switching Memory, IEEE Electronic Device Letters, vol.32, no.10, pp: 1439-1441, 2011.
8. Yanliang Wang, Lingming Yang, Ming Wang, Wenjin Luo, Beiyuan Hu, Yinyin Lin etal., Logic-based mega-bit CuxSiyO emRRAM with excellent scalability down to 22nm node for post-emFLASH SOC era, International Memory Workshop, pp.97-98, 2011.
9.         Wang M., Luo W.J., Wang Y.L., Yang L.M., Zhu W., Zhou P., Yang J.H., Gong X.G., Lin Y.Y. etal., A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistance distribution for embedded applications, VLSI Technology Symposiums, pp.89-90, 2010.
10.  Wang M., Song Y.L., Wan H.J., Lv H.B., Zhou P., Tang T.A., Lin Y.Y. etal., A CuO-based resistive memory with low power and high reliability SOC nonvolatile memory application,International Memory Workshop,2010.
11.  Wan H. J., Zhou P., Ye L., Lin Y. Y. etal., In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching, IEEE Electronic Device Letters, vol.31, no.3, pp. 246-248, 2010.
12.  Zhang Ji, Ding Yiqing, Xue Xiaoyong, Jin Gang, Wu Yuxin, Xie Yufeng, Lin Yinyin etal., A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell, IEICE Transactions on Electronics, vol.E93C, no. 12, pp.1692-1699 , 2010.
13. Wan H. J., Zhou P.,  Ye L., Lin Y. Y. etal.,Retention-failure mechanism of TaN/CuxO/Cu resistive memory with good data retention capability,Journal Of Vacuum Science&Technology B,vol.27,no.6,pp. 2468-2471,2009.
14. Zhou P., Wan H. J., Song Y. L., Yin M., Lv, Lv H. B., Lin Y. Y. etal.,A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and. Excellent Thermal Stability,2009 IEEE International Memory Workshop, pp.11-12,2009.
15. Zhou P., Yin M., Wan H. J., Lu H. B., Tang T. A., Lin, Y. Y. etal., Role of TaON interface for CuxO resistive switching memory based on a combine model, Applied Physics Letters,vol.94,no.5, 2009.
16. Lv Hangbing, Wang Ming, Wan Haijun, Song Yali, Luo Wenjing, Zhou Peng,Tang Tingao, Lin Yinyin etal.,Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode ,Applied Physics Letters,vol.94,no.21, 2009.
17. Tang Li, Zhou Peng, Wan Haijun, Jin Gang, Chen B. A.,Tang Ting-ao, Lin Yinyin, etal. Properties of p-n heterojunction diode based on Ge2Sb2Te5 and its application for phase change random access memory,Journal Of Applied Physics,vol.105,no.6, 2009.
18. Yin M., Zhou P., Lv, Lv H. B., Xu J., Song Y. L., Fu X. F., Tang T. A.,  Chen B. A., Lin Y. Y.,Improvement of resistive switching in CuxO using new RESET mode ,IEEE Electron Device Letters,vol.29,no.7,pp.681-683,2008.
19. Lv H. B., Yin M., Zhou, P.,Tang T. A., Chen, B. A., Lin Y. Y. etal., Improvement of endurance and switching stability of forming-free CuxO RRAM ,2008 NVSMW,pp.52-53,2008.
20. Zhou P., Lv,Lv, H. B., Yin M., Tang L., Song Y. L.,Tang T. A., Lin, Y.Y. etal.,Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application,Journal Of Vacuum Science & Technology B, vol.26,no.3,pp.1030-1032,2008.
21. Zhang Yin, Feng Jie, Zhang Zufa, Cai Bingchu, Lin Yinyin etal. ,Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory,Applied Surface Science,vol.254,no.17,pp.5602-5606,2008.
22. Lv H. B., Yin M., Fu X. F., Song Y. L., Tang, L., Zhou P., Zhao C. H.,Tang T. A.,Chen B. A., Lin Y. Y.,Resistive memory switching of CuxO films for a nonvolatile memory application,IEEE Electron Device Letters,vol.29,no.4, pp.309-311,2008.
23. Lv H. B., Yin M., Song Y. L.,Fu X. F., Tang L., Zhou P., Zhao C. H., Tang T. A., Chen B. A.,Lin Y. Y.,Forming process investigation of CuxO memory films ,IEEE Electron Device Letters,vol.29,no.1,pp.47-49,2008.
24. Lin Y.Y., Lv H.B., Zhou P., Yin M., Liao F.F., Cai Y.F., Tang T.A., Feng J., Zhang Y., Zhang Z.F., Qiao B.W., Lai Y.F., Cai B.C.,Chen B.,Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current,2007 NVSMW,pp.61 - 62,2007.
25. Zhou P.,Shin Y. C., Choi B. J., Choi S.,Hwang C. S., Lin Y. Y. etal.,Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe ,Electrochemical And Solid State Letters, vol.10,no.9,pp.H281-H283 ,2007.
26. Feng J., Zhang Z. F., Zhang Y., Cai B. C.,Lin Y. Y. etal., Crystallization process and amorphous state stability of Si-Sb-Te films for phase change memory ,Journal Of Applied Physics,vol.101,no.7, 2007.
27. Hong Yang, Lin Yinyin, Tan Ting-Ao, Chen Bomy,Multilevel storage in phase-change memory ,IEICE Transactions On Electronics,vol.E90C,no.3, pp.634-640,2007.
28. Wu X., Zhou P., Li J., Chen L. Y., Lin H. B. Lv Y. Y., Tang T. A.,Reproducible unipolar resistance switching in stoichiometric ZrO2 films,Applied Physics Letters,vol.90,no.18, 183507, 2007.
29. Qiao Baowei, Feng Jie, Lai Yunfeng,Cai Yanfei, Lin Yinyin etal., Phase-change memory device using Si-Sb-Te film for low power operation and multibit storage ,Journal Of Electronic Materials,vol.36,no.1,pp.88-91,2007.  
30. Lv Hangbing, Zhou Peng, Lin Yinyin etal., Electronic properties of GST for non-volatile memory,Microelectronics Journal,vol.37,no.9,pp.982-984,2006.
31. Lv Hangbing, Lin Yinyin  etal.,A nano-scale-sized 3D element for phase change memories,Semiconductor Science And Technology,vol.21,no.8,pp.1013-1017, 2006.
32. Liao Feifei, Ding Yiqing, Lin Yinyin etal., Characterization of Ge2Sb2Te5 thin film transistor and its application in non-volatile memory ,Microelectronics Journal,vol.37,no.8,pp.841-844,2006.


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