卢红亮
发表时间:2014-10-20 阅读次数:678次

 

基本资料

      籍贯:浙江金华
      职称:副研究员/硕导
      地址:上海市邯郸路220号,复旦大学微电子楼B212室
      电话:021-65642457
    Email:honglianglu@fudan.edu.cn

 教育与工作经历

      2003~2006    复旦大学微电子学系,博士
      2006~2007    意大利微电子材料与器件国家实验室,博士后研究员
      2007~2009  日本东京大学电气工程系,日本学术振兴会JSPS研究员
      2010~至今    复旦大学微电子学系副研究员(人才引进)

      2006年7月毕业于复旦大学微电子系,获得微电子学与固体电子学博士学位,并获得上海市优秀毕业生称号。2006年11月至2007年10月,作为一名博士后人员,受邀进入到意大利微电子材料和器件(MDM)国家实验室继续进行半导体材料和工艺技术方面的研究。2007年至2009年,获得日本学术振兴协会(JSPS)的资助,作为外国人特别研究员,进入到东京大学电气工程系进行为期2年的学术研究。2010年7月,进入复旦大学微电子学系工作,任副研究员,主要的研究方向为应用于下一代集成电路工艺的新型半导体材料与器件。在此期间,作为第一负责人,承担多项研究课题,并已在国内外期刊发表学术论文73篇,其中SCI收录47篇,EI收录32篇,申请国内专利12项。现为IEEE会员,并为Applied Physics Letters, Chemistry of Materials等国际期刊审稿。

 研究方向

  1. 原子层淀积(ALD)纳米级功能材料薄膜;
  2. 高迁移率半导体器件,III-V基、Si纳米线、石墨烯等;
  3. 基于纳米薄膜技术的新型光电器件;

目前负责的在研项目

  1. 国家自然科学基金(61376008);
  2. 国家自然科学基金(51102048);
  3. 国家重大专项(2011ZX02702-002);
  4. 国家863项目计划子课题;
  5. 教育部博士点专项科研基金资助课题(20110071120017);
  6. 专业集成电路与系统(ASIC)国家重点实验室自主课题(11MS017);
  7. 复旦大学自主创新科研项目;
  8. 复旦大学人才引进启动资金。

代表性著作/论文

  1. Hong-liang Lu, David Wei Zhang, Chapter 2“Issues in High-k Gate Dielectrics and its Stack Interfaces”, in Book “High-k Gate Dielectrics for CMOS Technology”, Wiley-VCH, Germany, 2012.
  2. Yu-Zhu Gu, Hong-Liang Lu*, Yang Geng, Zhi-Yuan Ye, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, and     David Wei Zhang, Optical and microstructural properties of ZnO/TiO2 nanolaminates prepared by atomic layer deposition, Nanoscale Research Letters, 8, 107 (2013).
  3. Zhi-Yuan Ye, Hong-Liang Lu*, Yang Geng, Yu-Zhu Gu, Zhang-Yi Xie, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang, Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition, Nanoscale Research Letters, 8, 108 (2013).
  4. Shang-Bin Zhu, Yang Geng, Hong-Liang Lu*, Yuan Zhang, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang, Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition, Journal of Alloys and Compounds, 577, 340 (2013).
  5. Jian-Shuang Liu, Yang Geng, Lin Chen, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu*, David Wei Zhang, Nitridation of atomic-layer-deposited HfO2/Al2O3 stacks by NH3 annealing, Thin Solid Films, 529, 230 (2013).
  6. Yang Geng, Zhang-Yi Xie, Wen Yang, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, David Wei Zhang,    Structural, Optical, and Electrical Properties of Hf-doped ZnO Films Deposited by Atomic Layer Deposition, Surface & Coatings Technology, (2013).
  7. Yang Geng, Zhang-Yi Xie, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang, Effects of Rapid Thermal Annealing on Structural, Luminescent, and Electrical Properties of Al-Doped ZnO Films Grown by Atomic Layer Deposition, ECS Journal of Solid State Science and Technology, 1, N45 (2012).
  8. Zhang-Yi Xie, Hong-Liang Lu*, Sai-Sheng Xu, Yang Geng, Qing-Qing Sun, Shi-Jing Ding, David Wei Zhang, Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy, Applied Physics Letters, 101, 252111 (2012).
  9. Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories”, Applied Physics Letters, 100, 063509 (2012).
  10. Jian-Shuang Liu, Yan Xu, Qing-Qing Sun, Hongliang Lu*, David Wei Zhang, Characterizations of NbAlO thin films grown by atomic layer deposition, Materials Letters, 65, 2182 (2012).
  11. Yang Geng, Li Guo, Sai-Sheng Xu, Qing-Qing Sun, Shi-Jin Ding, Hong-Liang Lu*, and David Wei Zhang*, Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition, Journal of Physics Chemistry C, 115,12317 (2011).
  12. Lin Chen, Hong-Yan Gou, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Peng-Fei Wan,; Shi-Jin Ding, David Wei Zhang, Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM With Embedded Ruthenium Nanocrystals, IEEE Electron Device Letters, 32, 794 (2011).
  13. Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang, Investigation of Thermal Stability of Atomic-Layer-Deposited MgO Thin Films on Si(100) Using X-Ray Photoelectron Spectroscopy, Electrochemical and Solid-State Letters, 13, G25, (2010).
  14. Hong-Liang Lu, Xiao-Liang Wang, Masakazu Sugiyama, and Yukihiro Shimogaki, Investigation on GaAs surface treated with dimethylaluminumhydride, Applied Physics Letters, 95, 212102, (2009).
  15. Hong-Liang Lu, Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, and Masakazu Sugiyama, In situ passivation of InP surface using H2S during metal organic vapor phase epitaxy, Applied Physics Letters, 95, 152103, (2009).
  16. Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang, Density functional theory study on the reaction mechanisms of bis(cyclopentadienyl) magnesium with hydrogenated and hydroxylated Si (100)-(2×1) surfaces, Journal of Physics Chemistry A, 113, 8791, (2009).
  17. H. L. Lu, G. Scarel, C. Wiemer, M. Perego, S. Spiga, M. Fanciulli, G. Pavia, Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors, Journal of The Electrochemical Society, 155, H807, (2008).
  18. H. L. Lu, G. Scarel, M. Alia, M. Fanciulli, S.J. Ding, D.W. Zhang, Spectroscopic ellipsometry study of thin NiO films grown on Si(100) by atomic layer deposition, Applied Physics Letters, 92, 222907, (2008).
  19. A. Lamperti, S. Spiga, H. L. Lu, C. Wiemer, M. Perego, E. Cianci, M. Alia, M. Fanciulli, Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN), Microelectronic Engineering, 85, 2425-2429, (2008).
  20. S. Schamm, P.E. Coulon, S. Miao, S.N. Volkos, H. L. Lu, L. Lamagna, C. Wiemer, D. Tsoutsou, G. Scarel, M. Fanciulli, Chemical/Structural Nanocharacterization And Electrical Properties of ALD-grown La2O3/Si Interfaces For Advanced Gate Stacks, Journal of The Electrochemical Society, 156, H1, (2008).
  21. Hong-Liang Lu, Min Xu, Shi-Jin Ding, Wei Chen, David Wei Zhang and Li-Kang Wang, X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates, Journal of Material Research, 22, 1214, (2007).
  22. Qing-Qing Sun, Wei Chen, Shi-Jin Ding, Min Xu, Hong-Liang Lu, Hans-Cristian Lindh-Rengifo, David Wei Zhang, Li-Kang Wang, Comparative study of passivation mechanism of oxygen vacancy with fluorine in HfO2 and HfSiO4, Applied Physics Letters, 90, 142904, (2007).
  23. Hong-Liang Lu, Min Xu, Shi-Jin Ding, Wei Chen, David Wei Zhang and Li-Kang Wang, Quantum chemical study of the initial surface reactions of HfO2 atomic layer deposition on the hydroxylated GaAs (001)-4×2 surface, Applied Physics Letters, 89, 162905, (2006).
  24. Hong-Liang Lu, Liang-Sun, Shi-Jin Ding, Min Xu, David Wei Zhang and Li-Kang Wang, Characterization of Al2O3/GaAs interface improved by NH3 plasma pretreatment, Applied Physics Letters, 89, 152910, (2006).
  25. Hong-Liang Lu, Wei Chen, Shi-Jin Ding, Min Xu, David Wei Zhang and Li-Kang Wang, Quantum chemical study of adsorption and dissociation of H2S on the Gallium-rich GaAs (001)-4×2 surface, Journal of Physical Chemistry B, 110, 9529, (2006).
  26. Wei Chen, Hong-Liang Lu, David Wei Zhang, Min Xu, Jie Ren, Jian-Yun Zhang, Ji-Tao Wang and Li-Kong Wang, Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge/Si(100) -2×1: Initial stage of atomic layer deposition of HfO2 on SiGe surface, Applied Physics Letters, 86, 142901, (2005).  

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