仇志军
发表时间:2014-10-20 阅读次数:681次

    仇志军,男,1977年4月出生,副教授, 硕士生导师。2004年7月毕业于中国科学院上海技术物理研究所,获博士学位。2004年6月作为全国优秀博士生之一受中德科学中心邀请出席在德国林岛(Lindau)举行的第54届诺贝尔奖获得者大会。2004-2006年在中芯国际集成电路制造有限公司从事0.13um高速和低功耗器件研发。2006-2008年在复旦大学做博士后,期间(2006-2007年)在瑞典皇家工学院从事硅纳米器件研究。2008年任复旦大学微电子研究院“微纳电子科技创新平台”助理研究员,2009年任复旦大学微电子系副教授。在IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters以及Physical Review B等国际期刊和会议上发表论文30多篇。
 
研究方向 

    集成电路工艺与器件, 具体包括基于硅纳米线和碳纳米管电子器件以及打印电子学方面的研究。
 
 
代表性论文
    1. Jun Luo, Zhijun Qiu, Chaolin Zha, Zhen Zhang, Dongping Wu, Jun Lu, Johan Åkerman, Mikael Östling, Lars Hultman, and Shi-Li Zhang, “Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1-xPtx silicide films”, Applied Physics Letters 96(3), 031911, 2010
    2. Jun Luo, Zhi-Jun Qiu, David Wei Zhang, Per-Erik Hellström, Mikael Östling, and Shi-Li Zhang, “Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation”, IEEE Electron Device Letters 30(6), 608, 2009 (通讯作者)
    3. Z. J. Qiu, S.-L. Zhang, and R. Liu, “Tuning of spin polarization in ferromagnetic resonant tunneling diodeby varying d doping”, Applied Physics Letters 92(24), 242110, 2008
    4. Zhijun Qiu, Zhen Zhang, M. Östling, S.-L. Zhang, “A comparative study of two different schemes to dopant segregation at NiSi/Si and PtSi/Si interfaces for Schottky barrier height lowering” , IEEE Transactions Electron Devices, 55(1), 396, 2008
    5. Zhen Zhang, Zhijun Qiu, Per-Erik Hellström, Gunnar Malm, Jörgen Olsson, Jun Lu,Mikael Ostling, Shi-Li Zhang, “SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation”, IEEE Electron Device Letters, 29(1), 125, 2008 (通讯作者)
    6. Zhen Zhang, Jun Lu, Zhijun Qiu, Per-Erik Hellström, M. Östling, S.-L. Zhang, “Performance fluctuation of FinFETs with Schottky barrier source/drain”, IEEE Electron Device Letters, 29(5), 506, 2008 (通讯作者)
    7. Jiantong Li, Zhi-Bin Zhang, Zhijun Qiu, and Shi-Li Zhang, “Contact-electrode insensitive rectifiers based on carbon nanotube network transistors”, IEEE Electron Device Letters, 29(5), 500, 2008
    8. Zhen Zhang, Zhijun Qiu, Ran Liu, Mikael Ostling, Shi-Li Zhang, “Schottky-barrier height tuning by means of ion implantation into preformed silicide films followed by drive-in anneal” , IEEE Electron Device Letters, 28(7), 565, 2007
    9. Z. J. Qiu, Y. S. Gui, T. Lin, N. Dai, J. H. Chu, N. Tang, J. Liu and B. Shen, “Weak Localization and Magnetointersubband scattering effects in an AlxGa1-xN/GaN two-dimensional electron gas”, Physical Review B, 69(12), 125335, 2004
    10.Z. J. Qiu, Y. S. Gui, S. L. Guo, , N. Dai, J. H. Chu, X. X. Zhang and Y. P. Zeng, “Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes”, Applied Physics Letters, 84(11), 1961, 2004
    11. Z. J. Qiu, Y. S. Gui, Z. W. Zheng, N. Tang, J. Liu, B. Shen, N. Dai and J. H. Chu, “Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure”, Solid State Communications 129(3), 187, 2004
    12. Z. J. Qiu, Y. S. Gui, T. Lin, J. Lu, B. Shen, N. Dai, J. H. Chu, “Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements”, Solid State Communications, 131(1), 37, 2004

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