周鹏
发表时间:2014-10-20 阅读次数:710次

        男,教授,硕士生导师。微电子学院先进电子器件研究所副所长,主持“上海市基于标准CMOS工艺的新型器件研发公共服务平台”工作。于2000年、2005年分别获复旦大学学士和博士学位。2006-2007年在首尔国立大学Inter-大学半导体高级研究中心任访问学者。主持了国家重大专项子课题、自然科学基金、上海市教委科技创新重点项目、上海市科委“启明星”人才计划、973子课题等11项国家部委科研项目,在复旦大学获得了“卓学计划”人才支持,已出版中英文3本著作教材,在国际主流学术期刊Science, Carbon, Applied Physics Letters, Scientific Reports, IEEE Electron Device Letters等发表第一作者及通信作者论文50余篇。其中2007年发表在Applied Physics Letters的研究工作已被SCI引用90次,其它总引用次数200余次。(2013.12月更新)

 

研究方向:

新型二维层状半导体电子器件工艺与特性研究; 
下一代CMOS兼容非挥发存储器工作机制与制造技术; 
全碳电路晶体管工艺技术。 
 

通信地址: 

上海市邯郸路220号复旦大学微电子学楼401室 邮编:200433

电子邮箱:pengzhou@fudan.edu.cn 电话:021-65642198

欢迎物理、材料、化学、微电子等专业的优秀毕业生积极联系

 

出版著作: 

1. 周 鹏,《半导体存储器概论》,北京邮电大学出版社,ISBN:978-7-5635-3658-0,2013,345千字。 

2. Peng Zhou, Lin Chen,Hangbing Lv,Haijun Wan,Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nano-Semiconductors Device and Technology’,Taylor & Francis Group,ISBN:978-1-4398-4835-7,2011,20千字。 

3. Peng Zhou, Lin Chen,Hangbing Lv,Haijun Wan,Qingqing Sun, Chapter ‘Nonvolatile Memory Device: Resistive Random Access Memory’ in Book ‘Nanoscale Semiconductor Memories: Technology and Applications’,Taylor & Francis Group,ISBN: 978-1-4665-6060-4,2013,20千字。 

 

代表性论文 

1. Qing-Qing Sun, Lu-Hao Wang, Wen Yang, Peng Zhou*, Peng-Fei Wang, Shi-Jin Ding and David Wei Zhang, Atomic scale investigation of a graphene nano-ribbon based high efficiency spin valve,(Scientific Reports, SCI,影响因子2.9),3(2921),(2013),1-5. (通信作者) 

2. Yan Shen, Songbo Yang , Peng Zhou*, Qingqing Sun, Pengfei Wang, Li Wan,Jing Li, Liangyao Chen, Xianbao Wang, Shijin Ding, David Wei Zhang, Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level,(Carbon,SCI,影响因子5.9),62,(2013),157-164. (通信作者) 

3. Peng Zhou, Hong-Qiang Wei, Qing-Qing Sun, Peng-Fei Wang, Shi-Jin Ding, An-Quan Jiang and David Wei Zhang, The tunable electrical properties of graphene nano-bridges, (Journal of Materials Chemistry C,SCI,JMC影响因子6.1), 1,(2013),2548-2552.

4. Qing-Qing Sun, Yong-Jun Li, Jin-Lan He, Wen Yang, Peng Zhou*, Hong-Liang Lu, Shi-Jin Ding, and David Wei Zhang, The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junction,(Applied Physics Letters ,SCI,影响因子3.8),102(9), (2013), 093104(1-3). (通信作者) 

5. Peng Zhou, Li Ye, Qing-Qing Sun, Peng-Fei Wang, An-Quan Jiang, Shi-Jin Ding, David Wei Zhang, Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition ,(Nanoscale Research Letters ,SCI,影响因子2.5),8, (2013), 91(1-5).

6. R. C. Fang, Q. Q. Sun, Peng Zhou*, W. Yang, P. F. Wang and David W. Zhang, High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition,((Nanoscale Research Letters,SCI,影响因子2.5), 8, (2013), 92(1-7). (通信作者) 

7. Shan Zheng, Qingqing. Sun, Wen Yang, Peng Zhou*,Hongliang Lu and David W. Zhang, Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer,(Nanoscale Research Letters,SCI,影响因子2.5),8,(2013), 116(1-5). (通信作者) 

8. Peng Zhou, Li Ye, Qing-Qing Sun, Lin Chen, Shi-Jin Ding, An-Quan Jiang, David Wei Zhang, The temperature dependence in nano-resistive switching of HfAlO (IEEE Transactions on Nanotechnology 11, 1059, 2012) 

9. Yong-Jun Li, Ming-Da Li, Jian-Shuang Liu, Qing-Qing Sun, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, and David Wei Zhang, Atomic scale investigation of the abnormal transport properties in bilayer graphene nanoribbon(Applied Physics Letters 100, 013110, 2012) (通信作者)

10. Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding,and David Wei Zhang, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories(Applied Physics Letters 100, 063509, 2012) (通信作者)

11. Yong-Jun Li, Qing-Qing Sun, Lin Chen, Peng Zhou, Peng-Fei Wang,Shi-Jin Ding, and David Wei Zhang, Hexagonal boron nitride intercalated multi-layer graphene:a possible ultimate solution to ultra-scaled interconnect technology(AIP Advances 2, 012191,2012) 

12. 周鹏, 魏红强, 孙清清, 叶立, 陈琳, 卢红亮, 吴东平, 丁士进, 张卫,石墨烯基红外探测器的高k 栅氧集成, (红外与毫米波学报.4,118, 2012)

13. Shen Y, Zhou P*, Sun Q. Q, Wan L., Li J., Chen L. Y., Zhang D. Wand Wang X. B, Optical investigation of reduced graphene oxide by spectroscopic ellipsometry and the band-gap tuning (Applied Physics Letters 99, 141911, 2011) (通信作者)

14. Sun Q.Q , Gu J. J, Chen L, Zhou P*, Wang P. F, Ding S.J, and Zhang D.W, Controllable filament with electric field engineering for resistive switching Uniformity(IEEE Electron Device Letters. 32,1167-1169, 2011) (通信作者)

15. Wan H. J, Zhou P*, Ye L, Lin Y. Y, Tang T. A, Wu H. M, and Chi M. H, In situ observation of compliance-current overshoot and its effect on resistive switching (IEEE Electron Device Letters. 31, 246-248, 2010) (通信作者)

16. Zhou P, Li J ,Chen L.Y , Gao C , Lin Y , Tang T.A, Resistance switching study of stoichiometric ZrO2 films for non-volatile memory application (Thin Solid Films 518,5652-5655,2010) 

17. Wu J.G, Zhou P*, Lin Y.Y, Huang R., Song S, Zou Q, Wu H.M and Chi M.H, Different interface role in CuOx based RRAMs (ECS Transactions, 27, 309, 2010)(通信作者)

18. Zhou P ,Yin M, Wan H J,Lv H. B, Tang T. A and Lin Y. Y, Role of TaON interface for CuxO resistive switching memory based on a combined model(Applied Physics Letters 94, 053510, 2009)

19. Wan H. J, Zhou P*, Ye L, Lin Y. Y, Tang T. A, Wu J.G,Wu H. M, and Chi M. H, Retention-failure mechanism of TaN/CuxO/Cu resistive memory with good data retention capability(Journal of Vacuum Science & Technology B, 27,2468-2471, 2009)(通信作者)

20.Tang L,Zhou P*, Wan H.J, Jin G, Chen B.A, Tang T.A and Lin Y.Y, Properties of p-n heterojunction diode based on Ge2Sb2Te5 and its application for phase change random access memory (Journal of Applied Physics 105,061627, 2009 ) (通信作者)

23.Cai Yanfei, Zhou Peng*, Tang Tingao , Gao Charles, Lin Yinyin, Multi-bit storage based on chalcogenide thin film transistor for high density nonvolatile memory application( Integrated Ferroelectrics,110,34-42, 2009 ) (通信作者)

24. Chen Y. R, Zhou P*, Li J and Chen L. Y, Electrical levels of defect investigation of ZrO2 thin film by spectroscopic ellipsometry, (Journal of Vacuum Science & Technology B, 27,1030-1034, 2009)(通信作者)

25. Zhou P, Wan H. J, Lin Y.Y and Chi M. H, A systematic investigation of TiN/CuxO/Cu RRAM with long retention and excellent thermal stability,International Memory Workshop 2009(EI,通信作者). 

26. Lin Y.Y, Zhou P*,Tang T.A and Chi M.H, Performance improvement of CuOx RRAM for non-volatile applications (ECS Transactions, 18, 281-286 ,2009) (通信作者)

27. Yin M, Zhou P*, Lv H. B, Xu J, Song Y. L, Fu X. F, Tang T. A, Chen B. A and Lin Y. Y, Improvement of resistive switching in CuxO using new RESET mode (IEEE Electron Device Letters. 29, 681-683, 2008) (通信作者)

28. Zhou P*, Li J, Chen L.Y, Tang T.A and Lin Y.Y, Thermal stability of reliable polycrystalline zirconium oxide for nonvolatile memory application (Chin. Phys. Lett. 25, 3742-3745, 2008)

29. Tang L,Zhou P*, Chen Y. R, Chen L.Y, Lv H. B, Tang T.A, and Lin Y.Y, Temperature and electrode-size dependences of the resistive switching characteristics of CuOx thin films (Journal of the Korean Physical Society 53 (4),2283-2286, 2008 ) (通信作者)

30. Zhou P, Lv H. B, Yin M., Tang L, Song Y. L, Tang T. A, Lin Y. Y, Bao A, A. Wu, S. Cai, H. Wu, C. Liang, and M. H. Chi,Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application (Journal of Vacuum Science & Technology B, 26,1030-1033, 2008) 

31. Lv Hang-Bing, Zhou Peng*, Fu Xiu-Feng, Yin Ming, Song Ya-Li,Tang Li, Tang Ting-Ao, Lin Yin-Yin, Polarity-free resistive switching characteristics of CuxO films for non-volatile memory applications (Chin. Phys. Lett. 25, 1087-1090, 2008) (通信作者) 

32. Lv H. B, Yin M, Zhou P*, Tang T. A, Chen B.A, Lin Y.Y, Bao A, Chi M. H, Improvement of endurance and switching Stability of forming-free CuxO RRAM, 2008Joint Non-Volatile Semiconductor Memory Workshop-International Conference onMemory Technology and Design (EI,通信作者)

33. Wu X, Zhou P*, Li J, Chen L.Y, Lv H.B, Lin Y.Y, Tang T.A, Reproducible unipolar resistance switching in stoichiometric ZrO2 films (Applied Physics Letters 90 (18): 183507, 2007) (通信作者)

34. Zhou P, Shin Y. C, Choi B. J, Choi S, Hwang C. S, Lin Y. Y, Lv H. B, Yan X. J, Tang T. A, Chen L. Y, and Chen B. M, Dynamic threshold switching behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe (Electrochemical and Solid-State Letters, 10, H281-H283, 2007)

35. Zhou P, Chen Y.R, Wu Y.H, Lin Y.Y, Tang T.A, Li J, Chen L.Y, Structural study and optical response of Ag:Bi2O3 nanoswitch materials (Journal of the Korean Physical Society 49 (5), 2151-2154, 2006 )

36. 周鹏,游冠军,钱世雄,陈良尧,纳米复合材料Ag:Bi2O3的光学响应与超快开关效应,(激光与光电子学进展 42(12),24,2005).

37. Zhou P, You G. J, Li J, Wang S.Y, Qian S.X, Chen L.Y, Annealing effect of linear and nonlinear optical properties of Ag:Bi2O3 nanocomposite films, (Optics Express,13(5), 1508-1514, 2005)

38.Zhou P, You H.Y , Jia J.H, Li J, Han T, Wang S.Y, Zhang R.J, Zheng Y.X and Chen L.Y, Concentration and size dependence of optical properties of Ag:Bi2O3 composite films by using the co-sputtering method, (Thin Solid Films, 455-456C, 157-160, 2004)

39. Zhou P, Wang S.Y, Li J, Zhang R.J, You H.Y, Shen Z.C, and Chen L.Y, Optical purity evaluation of the noble metal by the ellipsometric method, (Thin Solid Films,455-456C, 605-607, 2004) 

40. Zhou P, You G.J, Li Y.G., Han T, Li J, Wang S.Y, Chen L.Y, Liu Y and Qian S.X,Linear and ultrafast nonlinear optical response of Ag : Bi2O3 composite films (Applied Physics Letters 83 (19): 3876-3878, 2003)

41. Zhou P, You H.Y, Wang S.Y, Li H.Y, Yang Y.M, Chen L.Y,Effect of the inserted metal layer on the characteristic of light transmission of one-dimensional photonic crystals,(ACTA PHYSICA SINICA 51 (10): 2276-2280, 2002) 

 

合作者发表论文选录: 

1. Peng-Fei Wang, Xi Lin, Lei Liu, Qing-Qing Sun, Peng Zhou, Xiao-Yong Liu, Wei Liu,Yi Gong and David Wei Zhang, A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation,(Science, SCI,影响因子31),341(6146),(2013),640-643.

2. Cheng-Wei Cao, Wei-Ning Bao, Xi Lin, Xiao-Yong Liu, Yang Geng, Hong-Liang Lu, Qing-Qing Sun, Peng Zhou, David Wei Zhang and Peng-Fei Wang, N-ZnO nanowires/p-Si heterojunction with amorphous seed layer prepared by atomic layer deposition,(ECS Solid State Letters, SCI)2(4), (2013),Q25-Q28.

3. Lin Chen, Wen Yang, Ye Li,Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding and David Wei Zhang, Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application,(Journal of Vacuum Science & Technology A,SCI, 影响因子1.4),30(1), (2012), 01A148(1-4).

4. Lin Chen, Yan Xu, Qing-Qing Sun, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang, Atomic-Layer-Deposited HfLaO-based resistive switching memories with superior performance, (IEEE Electron Device Letters, SCI,影响因子2.8), (2010), 31(11), 1296-1298.

5. M. Wang, W. J. Luo, Y. L. Wang, L. M. Yang, W. Zhu, P. Zhou, J. H. Yang, X. G. Gong, Y. Y. Lin, A Novel CuxSiyO Resistive Memory in Logic Technology with Excellent Data,( 2010 Symposia on VLSI Technology and Circuits, Honolulu, USA) 

Retention and Resistance Distribution for Embedded Applications

6. Hangbing Lv, Ming Wang, Haijun Wan, Yali Song, Wenjing Luo, Peng Zhou, Tingao Tang, Yinyin Lin, R.Huang, S.Song, J. G.Wu, H. M. Wu, M. H. Chi, Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode, (Applied Physics Letters, SCI,影响因子3.8), 94(21), (2009),213502(1-3). 

7. H. B. Lv, M. Yin, Y. L. Song, X. F. Fu, L. Tang, P.Zhou, C. H. Zhao, T. A. Tang, B. A. Chen, and Y. Y. Lin, Forming process investigation of CuxO memory films, (IEEE Electron Device Letters, SCI,影响因子2.8), (2008), 29(1), 47-49. 

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