江安全
发表时间:2014-10-20 阅读次数:1651次

研究员 博士生导师

一、教育经历:
    1992 理学学士,兰州大学材料科学系
    1999 理学博士,张立德研究员,中国科学院固体物理研究所


二、研究经历:
    1999,6 – 2001,2     博士后,陈正豪研究员,中国科学院物理研究所光物理实验室
    2001,2 – 2003,6     Research Associate, Prof. J.F. Scott, 剑桥大学地球科学系
    2003,7 – 2006,2     Research Associate, Prof. P. Migliorato, 剑桥大学工程系
    2006,3 -                      研究员,博导,复旦大学微电子研究院


三、研究领域和兴趣
    1、基于CMOS工艺后端的不挥发薄膜存储器:铁电薄膜存储器(FeRAM),变阻存储器(RRAM),相变存储器(PCRAM),非挥发闪存(FLASH)等;
    2、新型纳米半导体器件的的工艺和物理; 
    3、高介电常数的铁电材料研制及其在微波器件上的应用;
    4、铁电液晶和压电、热释电材料等。


四、在研项目
    国家自然科学基金 (No. 60776054, 2008-2010); 上海市浦江人才计划 (No. 07pj14008, 2007-2009);
上海市科委重点基础研究计划 (No. 06JC14006, 2006-2008); 教育部新世纪优秀人才支持计划(2007-2009);


五、团队建设和研究生培养
    现有硕、博研究生6人,已毕业一人。教授课程有《铁电材料和器件》等。
  欢迎物理、材料、化学、微电子等专业的优秀毕业生积极报考。
  欢迎海内外有识之士加盟,努力让复旦大学非挥发薄膜存储器件的开发和集成技术水平跻身于世界前列。


六、学术团体
    国际集成铁电会议(ISIF)顾问委员会委员。


七、主要发表文章
1. A.Q. Jiang, Y.Y. Lin, and T.A. Tang, “Evaluation of interfacial-layer capacitance from fast polarization retention in ferroelectric thin films”, J. Appl. Phys.101, 56103 (2007).
2. A.Q. Jiang, Y.Y. Lin, and T.A. Tang, “Interfacial-layer modulation of domain switching current in ferroelectric thin films”, J. Appl. Phys. 101, 104105 (2007).
3. A.Q. Jiang, Y.Y. Lin, T.A. Tang, and Q. Zhang “Asymmetry of domain forward switching and multilevel relaxation times of domain backswitching in antiferroelectric Pb0.99Nb0.02(Zr0.84Sn0.12Ti0.04)0.98O3 thin films” Appl. Phys. Lett. 89, 32906 (2007).
4. A.Q. Jiang, Y.Y. Lin, and T.A. Tang, "Unsaturated charge injection at high-frequency fatigue of Pt/Pb(Zr,Ti)O3/Pt thin-film capacitors", Appl. Phys. Lett. 91,082901(2007.
5. A.Q. Jiang, Y.Y. Lin, and T.A. Tang, "The growth of interfacial-passive layers under thermal passivation of integrated Pb(Zr,Ti)O3 thin films", J. Appl. Phys. 102, 074118 (2007).
6. A.Q. Jiang, Y.Y. Lin, and T.A. Tang, "Charge injection and polarization fatigue in ferroelectric thin films" J. Appl. Phys. 102, 074109(2007).
7. A.Q. Jiang, Y.Y. Lin, and T.A. Tang, "nanosecond-rang measurements of imprint effect for Pt/IRO2/Pb(Zr0.4Ti0.6)O3/IrO2/Pt thin-film capacitors" Appl. Phys. 91, 202906(2007).
8. A.Q. Jiang, Y.Y. Lin, and T.A. Tang, “Coexisting depinning effect of domain walls during the fatigue in ferroelectric thin films”, Appl. Phys. Lett. 89, 32906 (2006).
9. A.Q. Jiang, C. Wang, B.L. Cheng, and Z.H. Chen, “Experimental determination of interfacial-layer thickness from polarization-voltage hysteresis loops in Pb(Zr0.4Ti0.6)O3 thin films”, Appl. Phys. Lett. 86, 202904 (2005).
10. A.Q. Jiang, D.P. Chu, P. Migliorato, T. Kijima, E. Natori, and T. Shimoda, “Nondispersive dielectric component of ferroelectric thin films in the frequency range of 10-1-106 Hz”, Appl. Phys. Lett. 87, 12905 (2005).
11. A.Q. Jiang, J.F. Scott, and J.M. Gregg, , “Progressive loss of ferroelectricity under bipolar pulsed fields and experimental determination of non-switchable polarization in Au/Ba0.5Sr0.5TiO3/SrRuO3 thin-film capacitors”,Integr. Ferroeletr. 61, 111 (2004).
12. A.Q. Jiang, J.F. Scott, H.B. Lu, and Z.H. Chen, “Phase transitions and polarizations in epitaxial BaTiO3/SrTiO3 superlattices studied by second-harmonic generation”, J. Appl. Phys. 93, 1180 (2003).
13. A.Q. Jiang, M. Dawber, J. F. Scott, M. Gregg, “Evidence for two-phase regions in Ba0.5Sr0.5TiO3 thin films from capacitance-voltage data”, Appl. Phys. Lett. 83, 3359 (2003).
14. A.Q. Jiang, M. Dawber, J.F. Scott, C. Wang, P. Migliorato,and M. Gregg, “Studies of switching kinetics in ferroelectric thin films”, Jpn. J. Appl. Phys. Part 1 42, 6973 (2003).
15. J.F. Scott, A.Q. Jiang, S.T Redfern, M. Zhang,and M. Dawber, “Infrared spectra and second-harmonic generation in barium strontium titanate and lead zirconate-titanate thin films: "Polaron" artifacts, J. Appl. Phys. 94, 3333 (2003).
16. J.F. Scott, M. Dawber, A.Q. Jiang, and F.D. Morrison, “New developments in ferroelectric thin films”, FERROELECTRICS 286, 945 (2003).
17. S. Rios, A. Ruediger, A.Q. Jiang, J.F. Scott, H. Lu, and Z. Chen, “Orthorhombic strontium titanate in BaTiO3-SrTiO3 superlattices”, JOURNAL OF PHYSICS-CONDENSED MATTER 15, L305-L309 (2003).
18. C. Wang, Q.F. Fang, Z.G. Zhu, A.Q. Jiang, S.Y. Wang, B.L. Cheng, Z.H. Chen, “Dielectric properties of Pb(Zr20Ti80)O-3/Pb(Zr80Ti20)O-3 multilayered thin films prepared by rf magnetron sputtering”, Appl. Phys. Lett. 82, 2880 (2003).
19. A.Q. Jiang, Weijia Wen, G.K.L. Wong, Z.H. Chen, and Y.L Zhou, “Second-harmonic generation study of domain walls in xBi2Ti4O11-(1-x)Bi4Ti3O12 films with large dielectric permittivity”, J. Appl. Phys. 91, 3172 (2002).
20. A.Q. Jiang, J.F. Scott, M. Dawber, and C. Wang, “Fatigue in Artifically-layered Pb(Zr,Ti)O3 ferroelectric films”, J. Appl. Phys. 92, 6756 (2002).
21. A.Q. Jiang, Z.H. Chen, F. Chen, Y.L. Zhou, M. He, and G.Z. Yang, “Effect of modulated antiparallel domain patterns on the dielectric permittivity in epitaxial Bi2Ti4O11-Bi4Ti3O12 films”, Phys. Rev. B 63, 104102 (2001).
22. . A.Q. Jiang, Z.H. Chen, Y.L. Zhou, and G.Z. Yang, “Current transient versus time investigation of charged defect motion in sandwich-structured La-modified Bi2Ti4O11 films for large charge storage”, Solid. State. Commun. 120, 65 (2001).
23. A. Q. Jiang, Z.H. Chen, W.H. Song, and L.D. Zhang, "Imaging of macrodomain collapse from coupling defect-dipole relaxation in Bi2Ti4O11 ceramics”, Phys. Rev. B 61, 5835 (2000).
24. A.Q. Jiang, Z.X. Hu and L.D. Zhang, “Investigations of morphotropic phase transformations in the solid solution of Bi4Ti3O12-Bi2Ti4O11 accompanied by defect dipole orientation and oxygen vacancy migration”, J. Appl. Phys. 85, 1739 (1999).
25. A.Q. Jiang, Z.X. Hu and L.D. Zhang, “The induced phase transformation and oxygen vacancy relaxation in La-modified Bismuth titanate ceramics”, Appl. Phys. Lett. 74, 114 (1999).
26. A. Q. Jiang, G.H. Li and L.D. Zhang, “Asymmetric polarization of defect dipoles in Bi4Ti3O12 and Bi2Ti4O11 ceramics with Na+ and La3+ modifications”, Phys. Rev. B 60, 9204 (1999). A.Q. Jiang, G.H. Li and L.D. Zhang,“ABSORPTION SHIFT AND STRUCTURAL PHASE TRANSITION IN NANOCRYSTALLINE Bi4Ti3O12-Na2TiO3 SOLID SOLUTION”, Solid State Commun. 104, 709 (1997).
27. A.Q. Jiang, G.H. Li and L.D. Zhang, “Dielectric study in nanocrystalline Bi4Ti3O12 prepared by chemical coprecipitation”, J. Appl. Phys. 83, 4878 (1998).
28. A.Q. Jiang, G.H. Li and L.D. Zhang, “Dielectric Properties in (Bi,Na)4Ti3O12”, Ferroelectrics, 215, 103 (1998).
 
八、通讯地址:

地址:上海邯郸路220号,复旦大学微电子研究所
电话:021-55664098;手机:15900455863;传真:021-65648267;
email: aqjiang@fudan.edu.cn

Autobiography:
Professor Anquan Jiang, the member of ISIF International advisory committee since 2007, is presently with the School of Microelectronics, Fudan University. He received his PH.D degree in 1999 in the studies of the nanostructural materials from Institute of Solid State Physics, Chinese Academy of Sciences (Hefei). Later, he started his postdoctoral researches in the institute of Physics (Beijing) (1999-2000) and Cambridge University (2001-2006) in cooperation with Profs. Z.H. Cheng, J.F. Scott, P. Migliorato and Dr. D.P. Chu in sequence. He main researches include nanotechnologies of nonvolative random access memories, such as ferroelectric memory (FeRAM), phase-change memory (PCRAM), resistor memory (RRAM) and Flash memory on the basis of CMOS, as well as the relevant device physics, especially about ferroelectric and semiconductor theories. He contributed more than 35 referred publications in the international journals, such as Appl. Phys. Lett., Phys. Rev. B, and J. Appl. Phys., with cited times over 200. In 2006-2007, He was selected into the Shanghai Pujiang Program and Program for New Century Excellent Talents, and reviewed more than 30 manuscripts in the international journals.


Major research Interests
Nonvolative random access memories on the basis of front-ended CMOS, such as ferroelectric memory (FeRAM), phase-change memory (PCRAM), resistor memory (RRAM) and Flash memory.
Nanotechnologies and physics of new emerged semiconductor devices.
Ferroelectric capacitors with high dielectric permittivity for RF IC;
Liquid-crystallized ferroelectrics, Piezoelectrics, and pyroelectric materials.


Current Research Projects
1. “Large-scale improvement of retention time for ferroelectric field-effect transistor memory”, Natural Science Foundation of China (No. 60776054, 2007).
2. “Designing and integration technology of nonvolatile ferroelectric memory with fast density and operating speed”, Shanghai Pujiang Program (No. 07pj14008, 2007).
3. “Non-destructive Readout and Reliability Studies of a novel structured Ferroelectric Random Access Memory”, Key Project of Shanghai Climbing Mountain Plan (No. 06JC14006, 2006);
4. “High Density and Reliability of Non-volatile Ferroelectric Random Access Memories with recognized information of storages”, Program for New Century Excellent Talents (2006, Ministry of Education of China); 


Address: 
Room 315, Department of Microelectronics, Fudan University, 220 Handan Road, Shanghai 200433, P.R. China;
Tel: +86-21-55664098; Fax: +86-21-65648267; email: aqjiang@fudan.edu.cn.

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