黄大鸣
发表时间:2014-10-20 阅读次数:1748次

    1982年7月获复旦大学物理系学士学位。1985年10月和1989年12月先后获美国伊利诺大学(UIUC)电机系硕士和博士学位。1989年12月至1991年6月在美国南佛罗里达大学(USF)物理系从事博士后研究。1991年6月起,到复旦大学物理系和应用表面物理国家重点实验室任教,先后任副教授(1993年),教授(1995年),博士生导师(1996年)。2000年11月至2002年11月赴美国佛吉尼亚联邦大学(VCU)电机系从事访问研究。2005年3月起任复旦大学微电子学系教授,博士生导师。

    主要研究方向:半导体电子器件的小型化和可靠性,半导体纳米材料和器件结构的微区探测表征,半导体异质结构和低维量子体系的光电特性。曾经承担国家杰出青年科学基金项目(1996-2000年),并负责过多项国家自然科学基金面上基金和其它研究项目。在SCI国际刊物发表论文80余篇,被他人引用1000余次。


近年发表的部分论著目录:

[1] W. Cao, C. Shen, S. Q. Cheng, D. M. Huang, H. Y. Yu, N. Singh, G. Q. Lo, D. L. Kwong, and M. F. Li, “Gate Tunneling in Nano-Wire MOSFETs,” IEEE Electron Device Letters, vol. 32, no. 4, pp. 461-463, 2011.
[2] X. Y. Huang, G. F. Jiao, W. Cao, D. M. Huang, H. Y. Yu, Z. X. Chen, N. Singh, G. Q. Lo, D. L. Kwong, and M. F. Li, “Effect of Interface-Traps and Oxide-Charge on Drain Current Degradation in Tunneling Field-Effect Transistors”, IEEE Electron Device Letters, vol. 31, pp. 779-781, 2010.
[3] G. F. Jiao, Z. X. Chen, H. Y. Yu, X. Y. Huang, D. M. Huang, N. Singh, G. Q. Lo, D. L. Kwong, M. F. Li, “Experimental Studies of Reliability Issues in Tunneling Field-Effect Transistors”, IEEE Electron Device Letters, vol. 31, pp. 396-398, 2010.
[4] G. F. Jiao, Z. X. Chen, H. Y. Yu, X. Y. Huang, D. M. Huang, N. Singh, G. Q. Lo, D. L. Kwong, M. F. Li, “New Degradation Mechanisms and Reliability Performance in Tunneling Field Effect Transistors”, in IEDM tech. Dig., 2009, pp. 741-744.
[5] W. J. Liu, D. M. Huang, Q. Q. Sun, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, and M. F. Li, “Studies of NBTI in pMOSFETs with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods”, in Proc. Int. Reliab. Phys. Symp., 2009, pp. 964-968.
[6] D. M. Huang, W. J. Liu, Z. Y. Liu, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, and M. F. Li, “A Modified Charge Pumping Method for the Characterization of Interface Trap Generation in MOSFETs”, IEEE Trans. on Electron Devices vol. 56, pp. 267-273, 2009.
[7] Z.Y. Liu, D. M. Huang, W. J. Liu, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, and M. F. Li, “Comprehensive Studies of BTI Degradations in SiON Gate Dielectric CMOS Transistors by New Measurement Techniques”, in Proc. Int. Reliab. Phys. Symp., 2008,pp733-734.
[8] M. F. Li, D. Huang, C. Shen, T. Yang, W. J. Liu, and Z. Y. Liu, “Understand NBTI Mechanism by Developing Novel Measurement Techniques”, IEEE Trans. on Device and Materials Reliability, vol. 8, pp. 62-71, 2008.
[9] W. J. Liu, Z. Y. Liu, D. M. Huang, C. C. Liao, L. F. Zhang, Z. H. Gan, W. Wong, C. Shen, and M. F. Li, “On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric”, in IEDM tech. Dig., 2007, pp. 813-816.
[10] C. Shen, M. F. Li, C. E. Foo, T. Yang, D. M. Huang, A. Yap, G. S. Samudra, and Y. C. Yeo, “Characterization and physical origin of fast Vth transit in NBTI of pMOSFETs with SiON dielectric”, in IEDM tech. Dig., 2006, pp. 333-336.
[11] 盛箎 蒋最敏 陆昉 黄大鸣,硅锗超晶格及低维量子结构,上海科学技术出版社,2004. (Book)
[12] D. Huang, M. A. Reshchikov, and H. Morkoç, “Growth, structures, and optical properties of III-nitride quantum dots”, in: Quantum Dots, Eds. E. Borovitskaya and M. S. Shur, World Scientific, 2002. (Book Chapter,Review Article)
 
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Email: dmhuang@fudan.edu.cn

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