丁世进
发表时间:2014-10-20 阅读次数:903次

        籍贯:安徽
        出生年月:1971.4
        职称:研究员/教授
        办公室地址:邯郸校区微电子楼314室
        电话:55664845
        Email: sjding@fudan.edu.cn

 

     

 

学习与工作经历

    男,1971年生。

    2001年7月获得复旦大学博士学位,2001.10 - 2002.11受德国洪堡研究奖学金资助在德国基尔(Kiel)大学工程学院做博士后研究。

    2003.2 - 2004.12在新加坡国立大学电机系硅纳米器件实验室任研究员。

    2005年1月作为引进人才加入复旦大学微电子研究院,被聘为副研究员(副教授)。2007年12月晋升为研究员(教授),2009年被评定为博士生导师。

    曾于2007年7月至9月赴德国汉诺威大学材料和器件研究所进行访问研究。

    2005年入选首届上海市浦江人才计划;2006年入选复旦大学“世纪之星”培养计划;2008年入选教育部新世纪优秀人才支持计划。

    自2005年回国以来,作为项目负责人承担了02科技重大专项课题、863项目、国家自然科学基金项目、教育部科学技术研究重点项目等10余项。

    至今,已在IEEE Electron Device Letters、IEEE Transactions on Electron Devices、Applied Physics Letters、Advanced Materials、Journal of Materials Chemistry等SCI期刊上发表论文100多篇,获授权国家发明专利10项。

 

学术兼职

  • 担任2008和2010年固态集成电路国际会议(ICSICT)的技术程序委员会委员,并任分会主席。
  • 担任第一届中国ALD学术会议分会主席,并做邀请报告。
  • 担任多种国际期刊的论文审稿人,如美国电气和电子工程师协会期刊(IEEE Electron Device Lett, IEEE Trans. Electron Device.)、美国电化学会期刊(J. Electrochem. Soc., Electrochem. Solid-State Lett.)、美国真空科学技术协会期刊(J. Vac. Sci. Technol. A/B)、英国物理研究所期刊(J. Phys. D, Semiconductor Sci. Technol.)等。2009年入选IEEE Electron Device Letters的金牌审稿人。

 

研究方向

  • 闪存(Flash)和阻变存储(RRAM)的原型器件研究; 
  • 用于电能存储的固态超级电容器及其制备技术; 
  • 射频集成电路用高密度MIM电容的制备及其射频测试; 
  • 极大规模集成电路互连材料和工艺; 
  • 纳米集成电路制造新工艺。 
     

对外合作(包括大学与企业)

    与国内高校的合作:与南京航空航天大学沈应中教授、华东理工大学陈彧教授建立了良好的合作关系,开展有机聚合物阻变材料及其信息存储研究;

    与国外大学间的合作:与德国基尔大学Franz Faupel教授、汉诺威大学H. Jörg Osten教授、日本东北大学田中澈教授、新加坡国立大学Zhu Chunxiang教授、瑞典乌普萨拉大学Shi-Li Zhang教授均有良好的合作。 

 

主要研究成果

 

 

 

      

 

主要论文列表

1. Fu, S; Qian, KJ; Ding, SJ; Zhang, DW; Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template, JOURNAL OF ELECTRONIC MATERIALS, 40(10), 2139-2146 (2011)


2.Sun, QQ; Gu, JJ; Chen, L; Zhou, P; Wang, PF; Ding, SJ; Zhang, DW; Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity, IEEE ELECTRON DEVICE LETTERS, 32(9), 1167-1169 (2011)


3.Xu, Y; Chen, L; Sun, QQ; Wang, PF; Ding, SJ; Zhang, DW; Initial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al2O3 and AlN, THIN SOLID FILMS, 519(18), 6000-6003 (2011)


4.Geng, Y; Guo, L; Xu, SS; Sun, QQ; Ding, SJ; Lu, HL; Zhang, DW; Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition, JOURNAL OF PHYSICAL CHEMISTRY C, 115(25), 12317-12321(2011)


5.Chen, L; Gou, HY; Sun, QQ; Zhou, P; Lu, HL; Wang, PF; Ding, SJ; Zhang, DW; Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM With Embedded Ruthenium Nanocrystals, IEEE ELECTRON DEVICE LETTERS, 32(6), 794-796(2011)


6.Huang, Y; Xu, Y; Ding, SJ; Lu, HL; Sun, QQ; Zhang, DW; Chen, ZY; Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (100), APPLIED SURFACE SCIENCE, 257 (16), 7305-7309 (2011)


7.Jiang, TT; Sun, QQ; Li, Y; Guo, JJ; Zhou, P; Ding, SJ; Zhang, DW; Towards the accurate electronic structure descriptions of typical high-constant dielectrics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 44 (18), 185402 (2011)


8.Chen, L; Sun, QQ; Gu, JJ; Xu, Y; Ding, SJ; Zhang, DW; Bipolar resistive switching characteristics of atomic layer deposited Nb2O5 thin films for nonvolatile memory application, CURRENT APPLIED PHYSICS, 11 (3), 849-852 (2011)


9.Huang, WY; Ding, SJ; Chen, HB; Sun, QQ; Zhang, DW; Formation of Pd nanocrystals in titanium-oxide film by rapid thermal annealing of reactively cosputtered TiPdO films, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 29(2), 021006 (2011)


10.Yang, CX; Ding, SJ; Zhang, DW; Wang, PF; Qu, XP; Liu, R; Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for Cu Metallization, ELECTROCHEMICAL AND SOLID STATE LETTERS, 14(2), H84-H87 (2011)


11.Li, YQ; Xu, HH; Tao, XA; Qian, KJ; Fu, SA; Shen, YZ; Ding, SJ; Synthesis and memory characteristics of highly organo-soluble polyimides bearing a noncoplanar twisted biphenyl unit containing aromatic side-chain groups, JOURNAL OF MATERIALS CHEMISTRY, 21(6), 1810-1821 (2011)


12.Chen, L; Xu, Y; Sun, QQ; Zhou, P; Wang, PF; Ding, SJ; Zhang, DW; Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance, IEEE ELECTRON DEVICE LETTERS, 31(11), 1296-1298 (2010)


13.Xu, Y; Chen, L; Sun, QQ; Gu, JJ; Lu, HL; Wang, PF; Ding, SJ; Zhang, DW; Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition, SOLID STATE COMMUNICATIONS, 150(35-36), 1690-1692 (2010)


14.Gou, HY; Ding, SJ; Huang, Y; Sun, QQ; Zhang, W; Wang, PF; Chen, ZY; Nonvolatile Metal-Oxide-Semiconductor Capacitors with Ru-RuOx Composite Nanodots Embedded in Atomic-Layer-Deposited Al2O3 Films,  JOURNAL OF ELECTRONIC MATERIALS, 39(8), 1343-1350 (2010)

15.Liu, H; Sun, QQ; Chen, L; Xu, Y; Ding, SJ; Zhang, W; Zhang, SL; Band Structures of Metal-Oxide Capped Graphene: A First Principles Study, CHINESE PHYSICS LETTERS, 27(7), 077201(2010)


16.Chen, L; Xu, Y; Sun, QQ; Liu, H; Gu, JJ; Ding, SJ; Zhang, DW; Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM, IEEE ELECTRON DEVICE LETTERS, 31(4), 356-358 (2010)


17.Yang, CX; Zhang, C; Sun, QQ; Xu, SS; Zhang, LF; Shi, Y; Ding, SJ
Zhang, W; Preparation of Ultra Low-k Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition, CHINESE PHYSICS LETTERS, 27(2), 027701(2010)


18.Lu, HL; Ding, SJ; Zhang, DW; Investigation of Thermal Stability of Atomic-Layer-Deposited MgO Thin Films on Si(100) Using X-Ray Photoelectron Spectroscopy, ELECTROCHEMICAL AND SOLID STATE LETTERS, 13(3), G25-G28 (2010)


19.Huang, Y; Gou, HY; Sun, QQ; Ding, SJ; Zhang, W; Zhang, SL; Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric, CHINESE PHYSICS LETTERS, 26(10), 108102 (2009)


20.Liao, ZW; Gou, HY; Huang, Y; Sun, QQ; Ding, SJ; Zhang, W; Zhang, SL; Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/HfO2/Al2O3 Tunnel Barrier, CHINESE PHYSICS LETTERS, 26(8), 087303(2009)


21.Lu, HL; Ding, SJ; Zhang, DW; Density Functional Theory Study on the Reaction Mechanisms of Bis(cyclopentadienyl)magnesium with Hydrogenated and Hydroxylated Si(100)-(2 x 1) Surfaces, JOURNAL OF PHYSICAL CHEMISTRY A, 113(30), 8791-8794 (2009)


22.Dong, L; Sun, QQ; Shi, Y; Guo, HW; Liu, H; Wang, C; Ding, SJ; Zhang, DW; Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer deposition, THIN SOLID FILMS, 517(15), 4355-4359(2009)


23.Shi, Y; Sun, QQ; Dong, L; Liu, H; Ding, SJ; Zhang, W; Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2 x 1, CHINESE PHYSICS LETTERS, 26(5), 053101(2009)


24.Shi, Y; Sun, QQ; Dong, L; Liu, H; Ding, SJ; Zhang, W; Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Property by Sulfuration and NH3 Thermal Nitridation, CHINESE PHYSICS LETTERS, 25(11), 3954-3956 (2008)


25.Sun, QQ; Shi, Y; Dong, L; Liu, H; Ding, SJ; Zhang, DW; Impact of germanium related defects on electrical performance of hafnium oxide, APPLIED PHYSICS LETTERS, 92, 102908 (2008)


26.Guo, HW; Zhu, L; Zhang, L; Ding, SJ; Zhang, DW; Liu, R; Influence of NH3 plasma treatment on chemical bonding and water adsorption of low-k SiCOH film, MICROELECTRONIC ENGINEERING, 85(10), 2114-2117 (2008)


27.Ding, SJ; Xu, J; Huang, Y; Sun, QQ; Zhang, DW; Li, MF; Electrical characteristics and conduction mechanisms of metal-insulator-metal capacitors with nanolaminated Al2O3-HfO2 dielectrics, APPLIED PHYSICS LETTERS, 93(9), 092909(2008)


28.Sun, QQ; Laha, A; Ding, SJ; Zhang, DW; Osten, HJ; Fissel, A; Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method, APPLIED PHYSICS LETTERS, 93(8), 083509 (2008)


29.Chen, MN; Ding, SJ; Sun, QQ; Zhang, DW; Wang, LK; Effect of pulse-plated nickel barriers on tin whisker growth for pure tin solder joints, JOURNAL OF ELECTRONIC MATERIALS, 37(6), 894-900 (2008)


30.Sun, QQ; Zhang, C; Dong, L; Shi, Y; Ding, SJ; Zhang, DW; Effect of chlorine residue on electrical performance of atomic layer deposited hafnium silicate, JOURNAL OF APPLIED PHYSICS, 103(11), 114102 (2008)


31.Liao, ZW; Huang, Y; Zhang, M; Sun, QQ; Ding, SJ; Zhang, W; Memory effect of metal-insulator-silicon capacitors with SiO2/HfO2/Al2O3 dielectrics, CHINESE PHYSICS LETTERS, 25(5), 1908-1911(2008)


32.Sun, QQ; Laha, A; Ding, SJ; Zhang, DW; Osten, HJ; Fissel, A; Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100), APPLIED PHYSICS LETTERS, 92(15), 152908 (2008)


33.Dong, L; Sun, QQ; Shi, Y; Liu, H; Wang, C; Ding, SJ; Zhang, DW; Quantum chemical study of the initial surface reactions of atomic layer deposition GaAs for photonic crystal fabrication, APPLIED PHYSICS LETTERS, 92(11), 111105(2008)


34.Zhang, M; Chen, W; Ding, SJ; Liu, ZY; Huang, Y; Liao, ZW; Zhang, DW; Physical and electrical characterization of atomic-layer-deposited Ru nanocrystals embedded into Al2O3 for memory applications, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 41(3), 032007(2008)


35.Sun, QQ; Dong, L; Shi, Y; Liu, H; Ding, SJ; Zhang, DW; Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide, APPLIED PHYSICS LETTERS, 92(5), 052907(2008)


36.Sun, L; Xue, Y; Ding, SJ; Guo, HW; Zhang, DW; Wang, LK; Effects of NH3 plasma pretreatment on initial reactions of atomic layer deposition TaN barrier layer on SiOC dielectric, APPLIED PHYSICS LETTERS, 91(24), 242903 (2007)


37.Huang, YJ; Huang, Y; Ding, SJ; Zhang, W; Ran, L; Electrical characterization of metal-insulator-metal capacitors with atomic-layer-deposited HfO2 dielectrics for radio frequency integrated circuit application, CHINESE PHYSICS LETTERS, 24(10), 2942-2944 (2007)


38.Pan, S; Ding, SJ; Huang, Y; Huang, YJ; Zhang, DW; Wang, LK; Liu, R; High-temperature conduction behaviors of HfO2/TaN-based metal-insulator-metal capacitors, JOURNAL OF APPLIED PHYSICS, 102(7), 073706 (2007)


39.Lu, HL; Chen, W; Ding, SJ; Zhang, DW; Wang, LK; DFT calculations of NH3 adsorption and dissociation on gallium-rich GaAs(001)-4 x 2 surface, CHEMICAL PHYSICS LETTERS, 445(4-6), 188-192 (2007)


40.Ding, SJ; Huang, YJ; Huang, Y; Pan, SH; Zhang, W; Wang, LK;High density Al2O3/TaN-based metal-insulator-metal capacitors in application to radio frequency integrated circuits, CHINESE PHYSICS, 16(9),2803-2808 (2007)


41.Chen, W; Liu, WJ; Zhang, M; Ding, SJ; Zhang, DW; Li, MF; Multistacked Al2O3/HfO2/SiO2 tunnel layer for high-density nonvolatile memory application, APPLIED PHYSICS LETTERS, 91(2), 022908 (2007)


42.Sun, QQ; Chen, W; Ding, SJ; Xu, M; Zhang, DW; Wang, LK; Effects of chlorine residue in atomic layer deposition hafnium oxide: A density-functional-theory study, APPLIED PHYSICS LETTERS, 91(2), 022901 (2007)


43.Zhang, M; Chen, W; Ding, SJ; Wang, XP; Zhang, DW; Wang, LK; Investigation of atomic-layer-deposited ruthenium nanocrystal growth on SiO2 and Al2O3 films, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 25 (4), 775-780 (2007)


44.Chen, W; Sun, QQ; Xu, M; Ding, SJ; Zhang, DW; Wang, LK; Atomic layer deposition of hafnium oxide from tetrakis(ethylmethylamino)hafnium and water precursors, JOURNAL OF PHYSICAL CHEMISTRY C, 111(17),6495-6499 (2007)


45.Lu, HL; Xu, M; Ding, SJ; Chen, W; Zhang, DW; Wang, LK; X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates, JOURNAL OF MATERIALS RESEARCH, 22(5), 1214-1218 (2007)


46.Sun, QQ; Chen, W; Ding, SJ; Xu, M; Lu, HL; Lindh-Rengifo, HC; Zhang, DW; Wang, LK; Comparative study of passivation mechanism of oxygen vacancy with fluorine in HfO2 and HfSiO4, APPLIED PHYSICS LETTERS, 90(14), 142904 (2007)


47.Ding, SJ; Zhang, M; Chen, W; Zhang, DW; Wang, LK; Memory effect of metal-insulator-silicon capacitor with HfO2-Al2O3 multilayer and hafnium nitride gate, JOURNAL OF ELECTRONIC MATERIALS, 36(3), 253-257 (2007)


48.Ding, SJ; Zhang, DW; Wang, LK; Atomic-layer-deposited Al2O3-HfO2 laminated and sandwiched dielectrics for metal-insulator-metal capacitors, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 40 (4), 1072-1076 (2007)


49.Chen, W; Zhang, M; Zhang, DW; Ding, SJ; Tan, JJ; Xu, M; Qu, XP; Wang, LK; Growth of high-density Ru- and RuO2-composite nanodots on atomic-layer-deposited Al2O3 film, APPLIED SURFACE SCIENCE, 253 (8), 4045-4050 (2007)


50.Xu, M; Zhang, C; Ding, SJ; Lu, HL; Chen, W; Sun, QQ; Zhang, DW; Wang, LK; Mechanism of interfacial layer suppression after performing surface Al(CH3)3 pretreatment during atomic layer deposition of Al2O3, JOURNAL OF APPLIED PHYSICS, 100 (10), 106101 (2006)


51.Ding, SJ; Huang, YJ; Li, YB; Zhang, DW; Zhu, C; Li, MF; Metal-insulator-metal capacitors using atomic-layer-deposited Al2O3/HfO2/Al2O3 sandwiched dielectrics for wireless communications, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 24(6), 2518-2522 (2006)


52.Lu, HL; Xu, M; Ding, SJ; Chen, W; Zhang, DW; Wang, LK; Quantum chemical study of the initial surface reactions of HfO2 atomic layer deposition on the hydroxylated GaAs(001)-4x2 surface, APPLIED PHYSICS LETTERS, 89(16), 162905 (2006)


53.Chen, W; Sun, QQ; Ding, SJ; Zhang, DW; Wang, LK; First principles calculations of oxygen vacancy passivation by fluorine in hafnium oxide, APPLIED PHYSICS LETTERS, 89 (15), 152904 (2006)


54.Lu, HL; Sun, L; Ding, SJ; Xu, M; Zhang, DW; Wang, LK; Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment, APPLIED PHYSICS LETTERS, 89 (15), 152910 (2006)


55.Lu, HL; Chen, W; Ding, SJ; Xu, M; Zhang, DW; Wang, LK; Quantum chemical study of the initial surface reactions in atomic layer deposition of TiN on the SiO2 surface, JOURNAL OF PHYSICS-CONDENSED MATTER, 18 (26), 5937-5944 (2006)


56.Lu, HL; Li, YB; Xu, M; Ding, SJ; Sun, L; Zhang, W; Wang, LK; Characterization of Al2O3 thin films of GaAs substrate grown by atomic layer deposition, CHINESE PHYSICS LETTERS, 23(7), 1929-1931 (2006)


57.Lu, HL; Chen, W; Ding, SJ; Xu, M; Zhang, DW; Wang, LK; Quantum chemical study of adsorption and dissociation of H2S on the gallium-rich GaAs (001)-4x2 surface, JOURNAL OF PHYSICAL CHEMISTRY B, 110(19), 9529-9533 (2006)


58.Xu, M; Xu, CH; Ding, SJ; Lu, HL; Zhang, DW; Wang, LK; Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate, JOURNAL OF APPLIED PHYSICS, 99(7), 074109 (2006)


59.Ding, SJ; Zhang, M; Chen, W; Zhang, DW; Wang, LK; Wang, XP; Zhu, CX;
Li, MF; High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2-Al2O3 nanolaminate/Al2O3, APPLIED PHYSICS LETTERS, 88(4), 042905 (2006)


60.Lu, HL; Chen, W; Ding, SJ; Xu, M; Zhang, DW; Wang, LK; Initial surface reactions in atomic layer deposition of Al2O3 on the hydroxylated GaAs(001)-4 x 2 surface, JOURNAL OF PHYSICS-CONDENSED MATTER, 17(48), 7517-7522 (2005)


61.Xu, M; Lu, HL; Ding, SJ; Sun, L; Zhang, W; Wang, LK; Effect of trimethyl aluminium surface pretreatment on atomic layer deposition Al2O3 ultra-thin film on Si substrate, CHINESE PHYSICS LETTERS, 22 (9), 2418-2421 (2005)


62.Ding, SJ; Zhu, CX; Li, MF; Zhang, DW; Atomic-layer-deposited Al2O3-HfO2-Al2O3 dielectrics for metal-insulator-metal capacitor applications, APPLIED PHYSICS LETTERS, 87(5), 053501 (2005)


63.Ling, QD; Song, Y; Ding, SJ; Zhu, CX; Chan, DSH; Kwong, DL; Kang, ET; Neoh, KG; Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoate, ADVANCED MATERIALS, 17 (4), 455 (2005)


64.Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, BJ; Chan, DSH; Yu, MB; Du, AY; Chin, A; Kwong, DL, Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts, IEEE ELECTRON DEVICE LETTERS, 25 (10), 681-683 (2004)


65.Kim, SJ; Cho, BJ; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Narayanan, B; Chin, A; Kwong, DL; Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric, IEEE ELECTRON DEVICE LETTERS, 25 (8), 538-540 (2004)


66.Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL; RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications, IEEE TRANSACTIONS ON ELECTRON DEVICES, 51 (6), 886-894 (2004)


67.Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Li, MF; Cho, BJ; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL; High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics, IEEE ELECTRON DEVICE LETTERS, 24 (12), 730-732 (2003)


68.Ding, SJ; Zaporojtchenko, V; Kruse, J; Zekonyte, J; Faupel, F; Investigation of the interaction of evaporated aluminum with vapor deposited Teflon AF films via X-ray photoelectron spectroscopy, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 76 (5), 851-856 (2003).


69.Ding, SJ; Zhang, DW; Wang, JT; Lee, WW; Chemical bonding of magnetron-sputtered copper on PECVD amorphous SiCOF film, APPLIED SURFACE SCIENCE, 206(1-4), 321-330 (2003)


70.Ding, SJ; Chen, L; Wan, XG; Wang, PF; Zhang, JY; Zhang, DW; Wang, JT; Structure characterization of carbon and fluorine-doped silicon oxide films with low dielectric constant, MATERIALS CHEMISTRY AND PHYSICS,71(2), 125-130 (2001)


71.Ding, SJ; Zhang, QQ; Zhang, DW; Wang, JT; Lee, WW; Copper metallization of low-dielectric-constant a-SiCOF films for ULSI interconnects, JOURNAL OF PHYSICS-CONDENSED MATTER, 13(31), 6595-6608(2001)


72.Ding, SJ; Zhang, QQ; Zhang, DW; Wang, JT; Zhou, YD; Lee, WW; XPS characterization of the interface between low dielectric constant amorphous fluoropolymer film and evaporation-deposited aluminum, APPLIED SURFACE SCIENCE, 178(1-4), 140-148 (2001)


73.Ding, SJ; Zhang, DW; Wang, JT; Lee, WW; Low dielectric constant SiO2 : C,F films prepared from Si(OC2H5)4/C4F8/Ar by plasma-enhanced CVD, CHEMICAL VAPOR DEPOSITION, 7(4), 142-147 (2001)


74.Ding, SJ; Wang, PF; Wang, XG; Zhang, DW; Wang, JT; Lee, WW; Effects of thermal treatment on porous amorphous fluoropolymer film with a low dielectric constant, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 83(1-3), 130-136 (2001)


75.Wang, PF; Ding, SJ; Zhang, JY; Zhang, DW; Wang, JT; Lee, WW; Low-dielectric-constant alpha-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C4F8/O2, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 72 (6), 721-724 (2001)


76.Ding, SJ; Wang, PF; Zhang, DW; Wang, JT; Lee, WW; A novel structural amorphous fluoropolymer film with an ultra-low dielectric constant, MATERIALS LETTERS, 49 (3-4), 154-159 (2001)


77.Wang, PF; Ding, SJ; Zhang, DW; Wang, JT; Lee, WW; An amorphous SiCOF film with low dielectric constant prepared by plasma-enhanced chemical vapor deposition, THIN SOLID FILMS, 385(1-2), 115-119 (2001)


78.Ding, SJ; Zhang, DW; Wang, PF; Wang, JT;Preparation and photoluminescence of the Ce-, Tb- and Gd-doped lanthanum borophosphate phosphor,MATERIALS CHEMISTRY AND PHYSICS, 68(1-3), 98-104(2001)


79.Ding, SJ; Wang, PF; Zhang, DW; Wang, JT; Lee, WW; The influence of Ar addition on the structure of an a-SiOCF film prepared by plasma-enhanced chemical vapour deposition, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 34(2), 155-159 (2001)


80.Wang, PF; Ding, SJ; Zhang, W; Zhang, JY; Wang, JT; Wei, WL; FTIR characterization of fluorine doped silicon dioxide this films deposited by plasma enhanced chemical vapor deposition, CHINESE PHYSICS LETTERS, 17(12), 912-914 (2000).

 

著作与授权专利列表

获授权的中国国家发明专利9项,清单如下:

  • 高性能金属/绝缘体/金属结构的电容器的制备方法(专利号:ZL 200610025277.5) 
  • 适用于快闪存储器的高密度钌纳米晶的溅射沉积制备方法(专利号:ZL 200710040770.9) 
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