张卫
发表时间:2014-10-20 阅读次数:1159次

    张卫,男,1968年5月出生,教授、博士生导师。1995年6月毕业于西安交通大学,获博士学位。1995-1997年在复旦大学做博士后,1997年起任教于复旦大学,1999年晋升为教授。2001年-2002年,以及2008年先后在德国开姆尼茨技术大学和汉诺威大学做访问学者(洪堡基金会洪堡学者)。现任复旦大学微电子学系系主任、复旦-Novellus互连研究中心主任。曾先后获得上海市优秀博士后,上海市高校优秀青年教师,教育部新世纪优秀人才等荣誉称号,2002年获得教育部二等奖。

 

    长期从事集成电路工艺和半导体器件的研究,曾经担任第一届亚洲CVD国际会议主席(1999),国际期刊Thin Solid Films 的Guest Editor。自1992年以来先后在Applied Physics Letters,IEEE Electron Device Letters,Journal of Applied Physics等国际期刊和会议上发表论文180多篇,申请专利20多项,合作出版学术著作1部。

 

主要学术兼职

1. Asia Pacific Subcommittee member of Technical Program Committee,The 2010 International Symposium on VLSI Technology, Systems and Applications(VLSI-TSA),April 26-28, 2010,Taiwan;

 

2.“极大规模集成电路制造装备及成套工艺”国家重大专项(02专项)总体组专家(2008年至今);

 

3.Asia Pacific Subcommittee member of Technical Program Committee,The 2009 International Symposium on VLSI Technology, Systems and Applications(VLSI-TSA),April 27-29, 2009,Taiwan;

 

4.江苏江阴电子信息产业技术联盟理事会理事(2008);

 

5.甘肃省微电子封装工程技术研究中心专家委员会副主任(2008-2009);

 

6.Program Committee member, The 9th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT 2008),Oct.20-23, 2008,Beijing, China;

 

7.上海市科学技术预见专家(2007至今);

 

8.上海市电子学会电子电镀专委会副主任(2007年至今)。

 

9.“极大规模集成电路制造装备及成套工艺”国家重大专项(02专项)实施方案和指南编写专家组专家(2006-2008);

 

10.Session Co-Chair, The 8th International Conference on Solid-State and Integrated-Circuit Technology(ICSICT-2006),Oct.23-26, 2006,Shanghai, China;

 

11.International Organizing Executive Committee member, The 3rd Asian Conference on Chemical Vapor Deposition,November 12-14, 2004,Taiwan;

 

12.国际期刊Thin Solid Films  Guest Editor(2001);

 

13.第1届亚洲CVD 国际会议(the 1st Asian Conference on Chemical Vapor Deposition)大会主席(1999);

 

研究方向

    集成电路工艺、微细加工技术和纳米器件。具体包括(1)先进铜互连工艺研究,如超低k互连介质,新型超薄扩散阻挡层,以及纳米尺度Via填充工艺等;(2)原子层淀积(ALD)工艺研究,如ALD高k栅介质,基于ALD工艺的高密度MIM电容等;(3)新型存储器,如纳米晶存储器、RRAM、DRAM等;(4)基于纳米线和纳米管的晶体管,以及隧穿场效应晶体管(TFET)等新结构器件研究。

 

承担的课题

    自1997年以来先后承担国家自然科学基金项目、863项目、上海市科委重点项目、国家重大专项等项目20余项。目前在研项目:

 

1.上海市国际科技合作项目(10520704200),高k栅介质的原子层淀积研究,2010.04-2012.03;

 

2.国家重大专项(2009ZX02035-005),先进互连技术,2009.01-2012.12;

 

3.国家重大专项(2009ZX02035-007),先导工艺技术开放平台—互连子平台,2009.01-2012.12;

 

4.国家自然科学(60776017),原子层淀积高介电常数栅介质的界面层抑止和性能调控基金,2008.01-2010.12;

 

5.上海市科委重点项目(08111100502),新型介质薄膜的光学测量研究,2008.08-2010.09;

 

代表性论文

1.Jun Luo, Zhi-Jun Qiu, David Wei Zhang, Per-Erik Hellström, Mikael Östling, Fellow, IEEE, and Shi-Li Zhang, Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation, IEEE Electron Device Letters, Vol. 30, No. 6, pp.608-610,2009

 

2.L Chen,.Y Xu,.; Q.-Q Sun, H Liu,.J.-J. Gu, S.-J. Ding,; D.W Zhang,. Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM, IEEE Electron Device Letters, 31(4), pp.356-358, 2010;

 

3.H. L. Lu, G. Scarel, L. Lamagna, M. Fanciulli, S. J. Ding, and D. W. Zhang, Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100), Applied Physics Letters, 93(15), 152906, 2008. 

 

4.S. J. Ding, J. Xu, Y. Huang, Q. Q. Sun, D. W. Zhang, and M. F. Li, Electrical characteristics and conduction mechanisms of metal-insulator-metal capacitors with nanolaminated Al2O3-HfO2 dielectrics,Applied Physics Letters, 93(9), 092909,2008.

 

5.Q. Q. Sun, A. Laha, S. J. Ding, D. W. Zhang, H. J. Osten, and A. Fissel, Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method, Applied Physics Letters, 93(8), 083509,2008.

 

6.L. Dong, Q. Q. Sun, Y. Shi, H. Liu, C. Wang, S. J. Ding, and D. W. Zhang, Quantum chemical study of the initial surface reactions of atomic layer deposition GaAs for photonic crystal fabrication, Applied Physics Letters, 92(11), 111105, 2008.

 

7.H. L. Lu, G. Scarel, M. Alia, M. Fanciulli, S. J. Ding, and D. W. Zhang, Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition, Applied Physics Letters, 92(22), 222907, 2008.

 

8.Q. Q. Sun, L. Dong, Y. Shi, H. Liu, S. J. Ding, and D. W. Zhang, Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide, Applied Physics Letters, 92(5), 052907, 2008.

 

9.Q. Q. Sun, Y. S. L. Dong, H. Liu, D. A. Shi-Jin, and D. W. Zhang, Impact of germanium related defects on electrical performance of hafnium oxide, Applied Physics Letters, 92(10), 102908, 2008.

 

10.Q. Q. Sun, A. Laha, S. J. Ding, D. W. Zhang, H. J. Osten, and A. Fissel, Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100),Applied Physics Letters, 92(15), 152908, 2008. 

 

11.Wei Chen, Wen-Jun Liu, Min Zhang, Shi-Jin Ding, David Wei Zhang, Ming-Fu Li, Multistacked Al2O3/HfO2/SiO2 tunnel layer for high-density nonvolatile memory application, Applied Physics Letters, 91 (2), 022908, 2007 

 

12.Qing-Qing Sun, Wei Chen, Shi-Jin Ding, Min Xu, Hong-Liang Lu, David Wei Zhang and Li-Kang Wang,Comparative Study of Passivation Mechanism of Oxygen Vacancy with Fluorine in HfO2 and HfSiO4, Applied Physics Letters, 90(14), 142904, 2007

 

13.Qing-Qing Sun, Wei Chen, Shi-Jin Ding, Min Xu, David Wei Zhang, Li-Kang Wang, Effects of chlorine residue in atomic layer deposition hafnium oxide: A density-functional-theory study, Applied Physics Letters, 91 (2), 022901, 2007 

 

14.Liang Sun, Yuan Xue, Shi-Jin Ding, Hao-Wen Guo, David Wei Zhang, Li-Kang Wang, Effects of NH3 Plasma Pretreatment on Initial Reactions of Atomic Layer Deposition TaN Barrier Layer on SiOC Dielectric, Applied Physics Letters, 91(24), 242903, 2007

 

15.Shi-Jin Ding, Min Zhang, Wei Chen, David Wei Zhang, Richard L. K. Wang, X. P. Wang, Chunxiang Zhu, Ming-Fu Li, High density and program-erasable metal-insulator-silicon capacitor with a novel dielectric structure of SiO2/ HfO2-Al2O3 nanolaminate/Al2O3 , Applied Physics Letters,88(4), 042905, 2006.

 

16.Wei Chen, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang, and Li-Kang Wang, First principle calculations of oxygen vacancy passivation by fluorine in hafnium oxide, Applied Physics Letters, 89(15),152904, 2006

 

17.Hong-Liang Lu, Liang Sun, Shi-Jin Ding, Min Xu, David Wei Zhang, Li-Kang Wang, Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment, Applied Physics Letters, 89(15), 152910, 2006

 

18.Hong-Liang Lu, Min Xu, Shi-Jin Ding, Wei Chen, David Wei Zhang, Li-Kang Wang, Quantum chemical study of the initial surface reactions of atomic layer deposition HfO2 on the hydroxylated GaAs (001)-4×2 surface,  Applied Physics Letters, 89(16), 162905, 2006

 

19.Wei Chen, Hong-Liang Lu, David Wei Zhang, Min Xu, Jie Ren, Jian-Yun Zhang, Ji-Tao Wang, and Li-Kang Wang, Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge/Si(100)-2x1: Initial stage of atomic layer deposition of HfO2 on SiGe surface, Applied Physics Letters, 86(14), 142901, 2005

 

20.Shi-Jin Ding, Chunxiang Zhu, Ming-Fu Li, David Wei Zhang, Atomic-layer-deposited Al2O3–HfO2–Al2O3 dielectrics for metal-insulator-metal capacitor applications, Applied Physics Letters, 87(5), 053501, 2005;

 

通讯地址

复旦大学微电子学系,上海市邯郸路220号,邮编:200433

电话:021-65642389, 传真:021-65643449

Email: dwzhang@fudan.edu.cn, dwzhang@fudan.ac.cn 

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