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讲座信息:Is Terahertz a Communication Waste Land or a Vibrant Frontier?
发表时间:2014-08-26 阅读次数:837次

专用集成电路与系统国家重点实验室
讲座信息

题  目:Is Terahertz a Communication Waste Land or a Vibrant Frontier?
报告人:Mau-Chung Frank Chang(UCLA)
时  间:2014年8月28日(周四)上午9:00-11:00
地  点:张江校区微电子楼389室


Abstract
    The infamous “Terahertz Gap” represents frequency spectrum that ranges from 0.3 to 3THz (or 300 to 3000GHz). It lies between traditional microwave and infrared domains but remains “untouchable” via either electronic or photonic means. The conventional “transit-timelimited” electronic devices hardly operate at its lower frequencies; the “band-gap-limited” photonic devices on the other hand operate far beyond its highest frequency. Since wavelengths range from 1000 to 100 μm, Terahertz signals tend to behave quasi-optically and are potentially instrumental for a wide range of industrial and scientific applications. Those include high-data rate, short distance and secured wireless & wireline communications, telemetric and remote sensing based on high-resolution radar, spectrometers and imagers for intelligent traffic/landing control, safety/security screening and bio-medical/food/drug sensing, analysis and monitoring. In this talk, we will discuss fundamental & technical challenges involved in building terahertz systems and progress made recently at UCLA to overcome electronic/photonic barriers for realizing highly integrated (sub)-mm-Wave and terahertz systems.


Biography
    Dr. Frank Chang is the Wintek Endowed Chair and Distinguished Professor of Electrical Engineering and the Chairman of the Electrical Engineering Department, UCLA. 
Before joining UCLA, he was the Assistant Director and Department Manager of the High Speed Electronics Laboratory at Rockwell Science Center (1983-1997), Thousand Oaks, California. In this tenure, he developed and transferred the AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) and BiFET (Planar HBT/MESFET) integrated circuit technologies from the research laboratory to the production line (now Conexant Systems and Skyworks). The HBT/BiFET productions have grown into multi-billion dollar businesses and dominated the cell phone power amplifiers and front-end module markets (currently exceeding one billion units/year). Throughout his career, his research has primarily focused on the development of high-speed semiconductor devices and integrated circuits for RF and mixed-signal communication and imaging system applications. He was the principal investigator at Rockwell in leading DARPA’s ultra-high speed ADC/DAC development for direct conversion transceiver (DCT) and digital radar receivers (DRR) systems. He was the inventor of the multiband, reconfigurable RF-Interconnects, based on FDMA and CDMA multiple access algorithms, for ChipMulti-Processor (CMP) inter-core communications and inter-chip CPU-to-Memory communications. He also pioneered the development of world’s first multi-gigabit/sec ADC, DAC and DDS in both GaAs HBT and Si CMOS technologies; the first 60GHz radio transceiver front-end based on transformer-folded-cascode (Origami) high-linearity circuit topology; and the low phase noise CMOS VCO (F.O.M.<-200dBc/Hz) with Digitally Controlled on-chip Artificial Dielectric (DiCAD). He was also the first to demonstrate CMOS oscillators in the Terahertz frequency spectrum (1.3THz) and the first to demonstrate a CMOS active imager at the sub-mm-Wave spectra (180GHz) based on a Time-Encoded Digital Regenerative Receiver. He was also the founder of an RF design company G-Plus (now SST and Microchip) to commercialize WiFi 11b/g/a/n power amplifiers, front-end modules and CMOS transceivers.
He was elected to the US National Academy of Engineering in 2008 for the development and commercialization of GaAs power amplifiers and integrated circuits. He was also elected as a Fellow of IEEE in 1996 and received IEEE David Sarnoff Award in 2006 for developing and commercializing HBT power amplifiers for modern wireless communication systems. He was the recipient of 2008 Pan Wen Yuan Foundation Award and 2009 CESASC Career Achievement Award for his fundamental contributions in developing AlGaAs/GaAs hetero-junction bipolar transistors. His recent paper “A Blocker-Tolerant Wideband Noise Cancelling Receiver with 2dB Noise Figure” was selected for the Distinguished Technical Paper Award in 2012 IEEE International Solid State Circuits Conference (ISSCC).  He received Rockwell’s Leonardo Da Vinci Award (Engineer of the Year) in 1992; National Chiao Tung University’s Distinguished Alumnus Award in 1997; and National Tsing Hua University’s Distinguished Engineering Alumnus Award in 2002.


    Dr. Frank Chang earned his B.S. in Physics from National Taiwan University in 1972, his M.S. in Materials Science from National Tsing Hua University in 1974, and his Ph.D. in Electronics Engineering from National Chiao Tung University in 1979.  

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