通知公告
当前位置:首页>通知公告
讲座信息:Efficient SRAM Failure Rate Analysis for Nanoscale IC Technology: Theory and Implementation
发表时间:2014-05-15 阅读次数:441次

讲座信息

题  目:Efficient SRAM Failure Rate Analysis for Nanoscale IC Technology: Theory and Implementation
报告人:Xin Li (Carnegie Mellon University)
时  间:2014年5月19日(周一)上午10:00-11:00
地  点:张江校区微电子楼369室


Abstract:
    Statistical analysis of SRAM has emerged as a challenging issue because (1) the failure rate of each SRAM cell is extremely small, and (2) the failure events of different SRAM cells are correlated due to shared peripheral circuits (e.g., sense amplifiers). This talk will present several efficient statistical methods to capture the rare failure events of SRAM circuits. Our proposed methods have been applied to both SRAM cells and their peripheral circuits. They achieve significant runtime speed-up and/or offer substantial error reduction over other state-of-the-art techniques. This work has been in collaboration with Texas Instruments and Cadence Design Systems, and the proposed algorithms have been extensively validated for various industrial design examples.


Bio:
    Xin Li received the Ph.D. degree in Electrical & Computer Engineering from Carnegie Mellon University in 2005. He is currently an Associate Professor in the ECE Department and the Assistant Director of the Center for Silicon System Implementation (CSSI) at Carnegie Mellon. His research interests include integrated circuit and signal processing. Dr. Li received the NSF CAREER Award in 2012, the IEEE Donald O. Pederson Best Paper Award in 2013, two ICCAD Best Paper Awards in 2004 and 2011, and one DAC Best Paper Award in 2010.

 

Copyright © 2014 上海市浦东新区张衡路825号微电子楼  邮编:201203

电话:021-51355200  E-mail:asic@fudan.edu.cn