时  间：2015年10月30日，9:30-11:00
地  点：光华楼东辅楼206会议室
题  目：Technology Challenges of GaN-on-Si Power Electronics Devices
报告人：Kevin J. Chen (陈敬) Professor, IEEE Fellow，香港科技大学电子及计算机工程系，Email: eekjchen@ust.hk

Abstract
Wide-bandgap GaN-based power switching devices are capable of delivering superior performance (e.g. lower on-state loss, higher off-state breakdown, higher switching frequency, higher operating temperature, etc.) for electric power converters, owing to the materials’ large bandgap, high breakdown field, and high electron saturation velocity. Currently, the lateral GaN-based heterojunction devices grown on low-cost and highly scalable Si substrates (i.e. GaN-on-Si platform) are dominating the scene of technology development in both industry and academia. To successfully commercialize GaN-on-Si power electronic devices, several key technical challenges need to be clearly understood and adequately addressed.
In this presentation, comprehensive discussions on the key challenges facing GaN-on-Si power device technology will be made from the view point of obtaining power-electronics-relevant characteristics including normally-off operation, large gate swing, small Vth-instability, high breakdown voltage and low dynamic on-resistance. The benefits in high-level integration of the lateral GaN device technology will be presented as well with a few examples of GaN mixed-signal integrated circuits.

Biography
Prof. Kevin J. Chen received his B.S. degree from Peking University, Beijing, China in 1988, and PhD degree from University of Maryland, College Park, USA in 1993. His industry experience includes performing R&D work on III-V high speed device technologies in NTT LSI Laboratories, Japan and Agilent Technologies, USA. Prof. Chen joined Hong Kong University of Science and Technology (HKUST) in 2000, where he is currently a full professor in the Department of Electronic and Computer Engineering. Prof. Chen has more than 300 publications in international journals and conference proceedings. He has been granted 9 US patents on GaN electron device technologies. Currently, his group focuses on developing GaN device technologies for power electronics, RF/microwave and high-temperature electronics applications.
Prof. Chen is a Fellow of IEEE. He has served as a distinguished lecturer and a member in the compound semiconductor device and IC technology committee and power electronics devices and ICs committee in IEEE Electron Device Society. He is a guest editor for the 2013 special issue of IEEE Transactions on Electron Device on “GaN Electronic Devices”. He is an editor for IEEE Transactions on Electron Devices, and has served as an editor for IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied Physics.