题  目：Ultra low-k insulating materials for advanced nanoelectronics
报告人：Prof. Mikhail R. Baklanov (Principal Scientist, IMEC, Belgium )
时  间：2015年12月21日周一9:30-11:00
地  点：邯郸校区微电子学楼B213会议室

Abstract

Materials with low dielectric constant (low-k) have been introduced into ULSI technology starting from early 1990th because of the need to increase the operation speed of integrated circuits, to decrease the dynamic power consumption, and cross-talk noise in IC interconnects. This presentation will give an overview of existing low-k materials, features of their modification during the different integration steps, new approaches allowing their integration. At the end, some properties and the challenges of future ultra low-k candidates will be discussed.

 
Biography

Mikhail R. Baklanov received his PhD degree of Candidate of Chemical Science in 1977. He joined the Institute of Semiconductor Physics (ISP) as an research scientist (1974-1980), an Senior scientist (1980-1990) and the the head of Laboratory (1990-1995). He joined IMEC, Belgium as a Visiting Professor in 1995 and is a Principal Scientist since 2003. He is also a Visiting Professor of Moscow Institute of Physics and Technology (MIPT) since 2015. He is a contributor of low-k/barrier parts of International Technology Roadmap for Semiconductors (ITRS) and a member of Board of Directors of Leuven Instruments since 2015.

More than 600 publications (including > 230 papers in peer reviewed journals), >30 granted patents and >60 invited presentations at International conferences, Editor and contributor of several books. Three patents related to ellipsometric porosimetry (EP). The EP system is presently under industrial production by Company “Semilab” and it is a standard system for evaluation of nanoporous low-k films developed for nanoelectronics. 4 patents related to damage free cryogenic etching that allowed to achieve the lowest integrated k-value in ultralow-k materials.