专用集成电路与系统国家重点实验室
讲座信息

题 目：From a fully ballistic FET to ultra-low noise cryogenic HEMTs
报告人：Dr. Yong JIN, CNRS/LPN, France
时 间：5月12日下午2：00
地 点：邯郸校区微电子楼B-213

Bio
Yong JIN received the B.S. degree in physics from the Fudan University, Shanghai, in 1981; the M.S. and the Ph.D degrees in solid state physics from the "Université Pierre et Marie Curie", Paris, in 1983 and 1986, respectively. In 1988, he joined the French "Centre National de la Recherche Scientifique" and became research director in 2006. He has developed specific process for realizing nanostructured field-effect devices for fundamental and applied physics. He has scientific, technical and administrative responsibilities in five European research programs and more than ten French national research projects on topics of hyper-frequency HEMTs, Coulomb blockade, quantum shot noise reduction, fractional charge e/3 by shot noise, mesoscopic circuits and cryogenic electronics. His current research interests include quantum coherent mesoscopic circuits, a new generation of ultra-low noise HEMTs for low frequency high impedance deep cryogenic readout electronics and nano-Schottky diodes for sub-THz and THz space electronics.
Selected publications:
Quantum limit of heat flow across a single electronic channel S. Jezouin, et al., Science 342, 601 (2013)
Coherence and Indistinguishability of Single Electrons Emitted by Independent Sources E. Bocquillon, et al., Science 339, 1054 (2013)
Minimal-excitation states for electron quantum optics using levitons J. Dubois, et al., Nature 502, 659 (2013)
Quantum tomography of an electron T. Jullien, et al., Nature 514, 603 (2014)
Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics, Q. Dong, et al., Appl. Phys. Lett. 105, 13504 (2014).
Hong-Ou-Mandel experiment for temporal investigation of single-electron fractionalization V. Freulon, et al., Nature Commun. 6, 20 (2015)
A 520–620-GHz Schottky Receiver Front-End for Planetary Science and Remote Sensing With 1070 K–1500 K DSB Noise Temperature at Room Temperature, J. Treuttel, et al., IEEE Trans. THz Sci. Technol. 6 (1), 148 (2016)

Abstract
Based on AlGaAs/GaAs heterojunction, a 2DEG (Two dimensional Electron Gas) with high electron mobility at low temperature can be obtained and used to investigate quantum transports of electrons at low temperature in mesoscopic physics. Beyond the basic research, we used a 2DEG and the QPC (Quantum Point Contact) configuration to demonstrate a fully ballistic FET (Field-Effect Transistor) at 4.2 K and the experimental result is confirmed by the simulation, using Landauer-Buttiker formalism from the mesoscopic physics. The know-how in mesoscopic devices and ballistic FET under cryogenic conditions allowed us to realize specific cryogenic HEMTs (High Electron Mobility Transistors) and to decrease their noise voltage and noise current to the range of sub-nV/Hz1/2 and of aA/Hz1/2, respectively. Indeed, these HEMTs are in the process of filling a gap in high impedance and low-frequency deep cryogenic readout electronics and few applications will be shown.