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讲座信息 Distinguished Lecture of IEEE Solid-State Circuits Society Lecture Title: Embedded Flash Memory: Technology, Circuits to Systems and MCU/SOC Applications
Lecturer: Dr. Hideto Hidaka (Renesas Electronics Corp, Japan)
Ordinator: Prof. Xiaoyang Zeng (Shanghai Chapter Chair of IEEE SSCS)
Lecture Time: 2016 年06 月30 日15:00-16:30
Lecture Location: 复旦大学张江校区微电子楼389 报告厅 Abstract:
Since its inception in early 1990’s, embedded flash memory (eFlash) for MCU applications has realized a revolutionary advancements by programmable instruction functions, which has proliferated in all the segments in MCU market for embedded system applications and has reached 28nm development today. This eFlash innovation has its roots in reducing the overall cost of products and embedded system development by programmable instruction functions to support consistent market growth.
Break-through technology and applications in automotive, security, and low-power applications are reviewed with insights into future prospects of application-driven non-volatile memory technology in the era of advanced automotive systems and of IoE (Internet of Everything). Trials on technology convergence scheme and future prospects of embedded non-volatile memory in the new memory hierarchy are also described.
1. MCU with eFlash technology; history and prospects over 20 years
2. Family of eFlash technology and use cases, eFlash innovation study
3. eFlash technology, architecture, circuits and sub-system design evolution
4. Meaning of non-volatility and programmability and its impact on the VLSI evolutions
5. Trends and future prospects in eFlash and eNVM required by auto-motive, cellular phone, and emerging IoE applications Bio:
Hideto Hidaka earned the B.S., M.S., and Ph.D. degrees in electronic engineering from the University of Tokyo, Tokyo, Japan. In Mitsubishi Electric, Renesas Technology, and Renesas Electronics he has been engaged in the research and development of high-density, application-specific, and embedded aspects of DRAM technology and circuits, embedded-flash memory for MCU, embedded non-volatile memory technology, and related technology platforms and analog IPs for MCU and SOC products.
Since 2005 he and his team have created the world's first split-gate embedded SONOS flash memory for MCU products at 90 nm technology node, which changed the MCU technology trend for automotive applications in performance, power, and reliability advantages. He
led this development into market dominance to make a de-facto standard in MCU applications, which was followed by successful 40 nm and 28 nm SONOS-eFlash development. He has consistently led the MCU technology and business strategies enabling the world's No.1 MCU market share position by Renesas Electronics now, where he was responsible for R&D in all the embedded non -volatile memories and technology platforms for MCU products. He is now the Senior Vice-President and Chief Technology Officer at Renesas Electronics Corp. responsible for all the corporate R&D activities.
He has authored and co-authored more than 60 journal papers and conference papers, as well as 293 US patents and 193 Japanese patents issued. He was a visiting scientist at the Media Laboratory, MIT, in 1987–88, and he has been a lecturer for a graduate course at the Tokyo Institute of Technology, Tokyo, in 2013–2015 Dr. Hidaka has served on program committees of technical conferences: ISSCC by the Memory Subcommittee Chair, Program Committee (ITPC) Vice-chair and Chair (2012), as well as A-SSCC, ICICDT, VLSI-TSA, IEICE-ICD, and ICDV. He is a member of the IEEE SSCS Adcom, an Associate Editor of JSSC, a Steering Committee member of Trans. VLSI Systems, an advisory board member for the IEEE SSCS Magazine, and Chair of IEEE-SSCS Kansai Chapter. He is an SSCS Distinguished Lecturer in 2015–2016. |