时 间：2016年10月13日13:00-15:00
地 点：张江校区微电子楼389

（一）Single-event effects on storage cells at advanced technology nodes
报告人：Prof. Bharat Bhuva（Vanderbilt university）

Abstract
With most reprogrammable circuits using conventional SRAM cells and/or FF cells, it is important to evaluate single-event performance of these cells at advanced technology nodes. For SRAM cells, design and ECC parameters are based on the size of multi-cell upsets in SRAM designs. This talk with discuss single-bit and multi-cell upsets for heavy-ions at 28-nm planar bulk and 16-nm FinFET bulk nodes. Single-event response of a variety of FF designs will also be covered.

Biography
Bharat Bhuva has been at Vanderbilt university since graduating with a Ph.D. degree from North Carolina State University. His main research interest is radiation effects on microelectronic devices, circuits, and systems. He has led research groups that have characterized fabrication processes for radiation effects since the 130-nm node. He has published/presented over 500 articles.

（二）System level neutron test
报告人：Shijie Wen（Cisco）

Abstract
In this talk, I’ll provide a system view of design for error handling and validation method. I’ll also touch some FPGA related reliability challenges and activities in industry.

Biography
Shi-Jie Wen received his Ph.D in Material Engineering from University of Bordeaux I in 1993. He joined Cisco Systems Inc., San Jose, CA in 2004, where he has been engaged in silicon technology and IC component reliability assurance as well as ASIC/memory technology development.