报告时间：2017年1月9日上午10:00 – 11:00.
报告场地：微电子楼B-213会议室。
报 告 人：鲁武，Wu Lu,Department of Electrical and Computer Engineering, The Ohio State University

Abstract:
In this talk, I will first discuss the advantages and challenges of resonant tunneling devices based on III-nitride semiconductors. Then I will introduce our approach to grow and fabricate GaN/AlN double heterojunction nanowire resonant tunneling diodes (RTDs) with record high tunneling current density and peak-valley-current-ratio. Based on theoretical modeling and numerical simulations, I will show how density of states and charge density are distributed and their impact on tunneling resonance in such highly polarized nanowire structures. At the end, I will briefly discuss preliminary results of InN/GaN double barrier RTDs.

Short Bio:
Dr. Wu Lu is currently a professor at Department of Electrical and Computer Engineering, The Ohio State University (OSU). He received his Ph.D in physical electronics and optoelectronics in 1994 from Southeast University. Before he joined OSU as a faculty in 2002, he held a number of research positions at Electronics and Telecommunications Research Institute, South Korea, Nanyang Technological University, Singapore, and University of Illinois at Urbana-Champaign, USA. He was a World Class University (WCU) Professorship at Gwangju Institute of Science and Technology (GIST) supported by National Research Foundation, South Korea, from 2009 to 2014. He is a visiting or guest professor at GIST, Fudan University, Southeast University, respectively. He has published over 120 papers in international journals and delivered numerous plenary and invited talks at international conferences. He has received many awards including Lumley Research Award in 2006 and Lumley Collaborative Research Award in 2013. His current research interests include semiconductor physics and devices, nanofabrication and nanomanufacturing, nanobiotechnology, chemical and biosensors, and nanomaterials for energy storage etc.